International business machines corporation (20240196758). MRAM DEVICE WITH HAMMERHEAD PROFILE simplified abstract
Contents
MRAM DEVICE WITH HAMMERHEAD PROFILE
Organization Name
international business machines corporation
Inventor(s)
Koichi Motoyama of Clifton Park NY (US)
Oscar Van Der Straten of Guilderland Center NY (US)
Jennifer Church of Albany NY (US)
Chih-Chao Yang of Glenmont NY (US)
MRAM DEVICE WITH HAMMERHEAD PROFILE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240196758 titled 'MRAM DEVICE WITH HAMMERHEAD PROFILE
The patent application describes a magnetic tunnel junction (MTJ) stack with a hammerhead profile, consisting of vertically aligned layers of a top electrode, a free layer, a tunneling barrier, a reference layer, and a bottom electrode. The bottom electrode and the reference layer have a first width, while the top electrode, free layer, and tunneling barrier each have a second width greater than the first width.
- The innovation involves forming vertically aligned layers of a bottom electrode and a reference layer on the bottom electrode, each with a first width.
- Additionally, vertically aligned layers of a tunneling barrier, a free layer, and a top electrode are formed on the free layer, each with a second width greater than the first width.
Potential Applications: - Data storage devices - Magnetic sensors - Spintronic devices
Problems Solved: - Enhanced performance of magnetic tunnel junctions - Improved efficiency in data storage applications
Benefits: - Increased data storage capacity - Higher sensitivity in magnetic sensors - Enhanced performance in spintronic devices
Commercial Applications: Title: Advanced Magnetic Tunnel Junction Technology for Next-Generation Data Storage This technology could revolutionize the data storage industry by improving the efficiency and capacity of storage devices, leading to faster and more reliable data processing.
Questions about Magnetic Tunnel Junction Technology: 1. How does the hammerhead profile of the MTJ stack contribute to its performance? 2. What are the advantages of having vertically aligned layers in the MTJ stack?
Frequently Updated Research: Researchers are continuously exploring new materials and fabrication techniques to further enhance the performance of magnetic tunnel junctions for various applications.
Original Abstract Submitted
a magnetic tunnel junction (mtj) stack with a hammerhead profile, including vertically aligned layers of a top electrode, a free layer, a tunneling barrier, a reference layer and a bottom electrode, where the bottom electrode and the reference layer each include a first width, and the top electrode, the free layer and the tunneling barrier, each include a second width greater than the first width. forming vertically aligned layers of a bottom electrode and a reference layer on the bottom electrode, of a magnetic tunnel junction (mtj), where the bottom electrode, the reference layer and the hard mask, each include a first width, and separately forming vertically aligned layers of a tunneling barrier, a free layer and a top electrode on the free layer, where the tunneling barrier, the free layer and the top electrode each include a second width, where the second width is greater than the first width.
