International business machines corporation (20240196755). REACTIVE SERIAL RESISTANCE REDUCTION FOR MAGNETORESISTIVE RANDOM-ACCESS MEMORY DEVICES simplified abstract

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REACTIVE SERIAL RESISTANCE REDUCTION FOR MAGNETORESISTIVE RANDOM-ACCESS MEMORY DEVICES

Organization Name

international business machines corporation

Inventor(s)

Matthias Georg Gottwald of Ridgefield CT (US)

Guohan Hu of Yorktown Heights NY (US)

Stephen L. Brown of Carmel NY (US)

Alexander Reznicek of Troy NY (US)

REACTIVE SERIAL RESISTANCE REDUCTION FOR MAGNETORESISTIVE RANDOM-ACCESS MEMORY DEVICES - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240196755 titled 'REACTIVE SERIAL RESISTANCE REDUCTION FOR MAGNETORESISTIVE RANDOM-ACCESS MEMORY DEVICES

The semiconductor device described in the patent application consists of a substrate with a crystalline bottom electrode layer, a conductive crystalline metal layer, and a conductive oxide layer with low resistance. Above these layers is a magnetic tunnel junction (MTJ) comprising a tunnel barrier layer, a free layer, and a reference layer.

  • The semiconductor device features a unique structure with a combination of layers to enhance its performance.
  • The conductive oxide layer with low resistance improves the overall conductivity of the device.
  • The MTJ design allows for efficient data storage and retrieval in electronic devices.

Potential Applications:

  • This technology can be applied in data storage devices such as hard drives and solid-state drives.
  • It can also be used in magnetic sensors and other electronic devices requiring efficient data processing.

Problems Solved:

  • The semiconductor device addresses the need for high-performance data storage solutions.
  • It provides a reliable and efficient method for storing and retrieving data in electronic devices.

Benefits:

  • Improved data storage and processing capabilities.
  • Enhanced device performance and reliability.
  • Potential for increased efficiency in electronic devices.

Commercial Applications:

  • The technology can be utilized in the development of advanced data storage devices for consumer electronics, industrial applications, and data centers.

Prior Art:

  • Researchers can explore prior patents related to semiconductor devices, magnetic tunnel junctions, and conductive oxide layers to understand the existing technology landscape.

Frequently Updated Research:

  • Researchers are continually exploring ways to enhance the performance and efficiency of semiconductor devices for various applications.


Original Abstract Submitted

a semiconductor device that includes a substrate, a crystalline bottom electrode layer on an upper side of the semiconductor substrate, a conductive crystalline metal layer above the crystalline bottom electrode layer, and a conductive oxide layer above the conductive crystalline metal layer. the conductive oxide layer has a low resistance. the semiconductor device also includes a magnetic tunnel junction (mtj) above the conductive crystalline metal layer, the mtj including a tunnel barrier layer, a free layer on a first side of the tunnel barrier layer and a reference layer on a second side of the tunnel barrier layer opposite the first side.

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