International business machines corporation (20240196627). EMBEDDED ReRAM WITH BACKSIDE CONTACT simplified abstract

EMBEDDED ReRAM WITH BACKSIDE CONTACT

Organization Name

international business machines corporation

Inventor(s)

Min Gyu Sung of Latham NY (US)

Julien Frougier of Albany NY (US)

Ruilong Xie of Niskayuna NY (US)

Chanro Park of Clifton Park NY (US)

Juntao Li of Cohoes NY (US)

Soon-Cheon Seo of Glenmont NY (US)

Takashi Ando of Eastchester NY (US)

Chen Zhang of Guilderland NY (US)

Heng Wu of Santa Clara CA (US)

EMBEDDED ReRAM WITH BACKSIDE CONTACT - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240196627 titled 'EMBEDDED ReRAM WITH BACKSIDE CONTACT

The semiconductor structure in this patent application includes a one-transistor one-capacitor (1t1r) device with an embedded resistive random access memory (reram) that has a width larger than 1 gate pitch. The reram can be located on the frontside or backside of the structure, with a frontside contact structure connected to the source region of the transistor and a backside contact structure connected to the drain region of the transistor.

• The semiconductor structure features a 1t1r device with an embedded reram.
• The reram has a width larger than 1 gate pitch.
• The reram can be situated on the frontside or backside of the structure.
• Frontside contact structure links to the source region of the transistor.
• Backside contact structure links to the drain region of the transistor.

Potential Applications: - Memory storage applications - Integrated circuit design - Semiconductor manufacturing

Problems Solved: - Enhanced memory storage capabilities - Improved circuit performance - Increased efficiency in semiconductor devices

Benefits: - Higher data storage capacity - Faster data access speeds - Enhanced overall device performance

Commercial Applications: Title: "Innovative Semiconductor Structure with Enhanced Memory Capabilities" This technology could be utilized in the development of advanced electronic devices, such as smartphones, tablets, and computers, to improve memory storage and overall performance.

Prior Art: Readers can explore prior patents related to semiconductor structures with embedded reram and 1t1r devices to gain a deeper understanding of the technological advancements in this field.

Frequently Updated Research: Stay informed about the latest developments in semiconductor manufacturing techniques and memory storage technologies to enhance the efficiency and performance of electronic devices.

Questions about Semiconductor Structure with Embedded Reram: 1. How does the width of the reram impact the overall performance of the semiconductor structure? 2. What are the potential challenges in integrating reram into semiconductor devices?

Original Abstract Submitted

a semiconductor structure including a one-transistor one-capacitor (1t1r) device is provided that includes an embedded resistive random access memory (reram) having a width larger than 1 gate pitch, that is present in a frontside or the backside of the structure, a frontside contact structure electrically connected to a source region of the transistor of the 1t1r device and a backside contact structure electrically connected to a drain region of the transistor of the 1t1r device.