International business machines corporation (20240194696). GATE CONTROL FOR STAGGERED STACKED FIELD-EFFECT TRANSISTORS simplified abstract

GATE CONTROL FOR STAGGERED STACKED FIELD-EFFECT TRANSISTORS

Organization Name

international business machines corporation

Inventor(s)

Genevieve Antoinette Kane of Albany NY (US)

Manasa Medikonda of Albany NY (US)

Md Nabil Azad of Malta NY (US)

Shravana Kumar Katakam of Lehi UT (US)

Nicholas Latham of Albany NY (US)

Indira Seshadri of Niskayuna NY (US)

Tao Li of Slingerlands NY (US)

GATE CONTROL FOR STAGGERED STACKED FIELD-EFFECT TRANSISTORS - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240194696 titled 'GATE CONTROL FOR STAGGERED STACKED FIELD-EFFECT TRANSISTORS

The semiconductor device described in the patent application consists of two transistors, one with a first gate region and the other with a second gate region. The second transistor is stacked on top of the first transistor in a staggered configuration, with a dielectric bonding layer between them. A gate cut portion is present along the sides of both gate regions, and a gate contact is connected to at least one of the gate regions.

• The semiconductor device features a unique stacked configuration of transistors, allowing for efficient use of space.
• The presence of a dielectric bonding layer enhances the stability and performance of the device.
• The gate cut portion along the sides of the gate regions enables precise control of the transistors.
• The gate contact provides a connection point for external control of the transistors.

Potential Applications: - This technology could be utilized in the development of advanced electronic devices such as smartphones, tablets, and computers. - It may find applications in the automotive industry for use in vehicle control systems. - The semiconductor device could also be integrated into IoT devices for improved connectivity and functionality.

Problems Solved: - Efficient use of space in semiconductor devices. - Enhanced stability and performance of transistors. - Precise control of transistor operation.

Benefits: - Improved functionality and performance of electronic devices. - Enhanced reliability and durability of semiconductor components. - Potential cost savings in manufacturing processes.

Commercial Applications: Title: Advanced Semiconductor Devices for Enhanced Electronic Performance This technology has the potential to revolutionize the electronics industry by improving the efficiency and performance of electronic devices. It could be adopted by semiconductor manufacturers looking to enhance the capabilities of their products and gain a competitive edge in the market.

Prior Art: Readers interested in exploring prior art related to this technology can start by researching patents and publications in the field of semiconductor device design and fabrication processes.

Frequently Updated Research: Stay informed about the latest advancements in semiconductor technology by following research publications and industry developments related to stacked transistor configurations and dielectric bonding in semiconductor devices.

Questions about Semiconductor Device Innovation: 1. How does the stacked configuration of transistors in this semiconductor device improve performance compared to traditional designs? 2. What are the potential challenges in implementing this technology on a large scale in commercial electronic devices?

Original Abstract Submitted

a semiconductor device includes a first transistor comprising a first gate region, and a second transistor comprising a second gate region. the second transistor is stacked on the first transistor in a staggered configuration. a dielectric bonding layer is between the first transistor and the second transistor, and a gate cut portion is along a side of the first gate region and a side of the second gate region. a gate contact is connected to at least one of the first gate region and the second gate region.