International business machines corporation (20240194691). ENLARGED OVERLAP BETWEEN BACKSIDE POWER RAIL AND BACKSIDE CONTACT simplified abstract

ENLARGED OVERLAP BETWEEN BACKSIDE POWER RAIL AND BACKSIDE CONTACT

Organization Name

international business machines corporation

Inventor(s)

Ruilong Xie of Niskayuna NY (US)

Tao Li of Slingerlands NY (US)

Nicholas Alexander Polomoff of Hopewell Junction NY (US)

Chih-Chao Yang of Glenmont NY (US)

ENLARGED OVERLAP BETWEEN BACKSIDE POWER RAIL AND BACKSIDE CONTACT - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240194691 titled 'ENLARGED OVERLAP BETWEEN BACKSIDE POWER RAIL AND BACKSIDE CONTACT

Simplified Explanation: The patent application describes a structure where a backside power rail is directly connected to a source-drain epitaxy region of a positive field effect transistor (p-FET) via a backside contact that is vertically aligned with the source-drain epitaxy region. The backside power rail makes direct contact with both the upper horizontal surface and the vertical side surface of the backside contact.

• The backside power rail is positioned directly below and connected to the source-drain epitaxy region of a p-FET.
• The connection is made through a backside contact that is aligned with the source-drain epitaxy region.
• The backside power rail contacts both the upper horizontal surface and the vertical side surface of the backside contact.

Key Features and Innovation:

• Direct connection between backside power rail and source-drain epitaxy region.
• Vertical alignment of backside contact with source-drain epitaxy region.
• Dual contact points between backside power rail and backside contact.

Potential Applications: This technology can be used in the semiconductor industry for improving the performance and efficiency of positive field effect transistors.

Problems Solved: This innovation addresses the need for a more direct and efficient power connection in positive field effect transistors.

Benefits:

• Enhanced performance of positive field effect transistors.
• Improved power distribution within semiconductor devices.

Commercial Applications: Potential commercial applications include the manufacturing of high-performance electronic devices and semiconductor components.

Prior Art: Further research can be conducted in the field of semiconductor device design and power distribution within integrated circuits.

Frequently Updated Research: Ongoing research in semiconductor technology and power management systems may provide additional insights into the applications of this innovation.

Questions about Backside Power Rail Technology: 1. How does the direct connection between the backside power rail and the source-drain epitaxy region improve the performance of positive field effect transistors? 2. What are the potential challenges in implementing this technology in large-scale semiconductor manufacturing processes?

Original Abstract Submitted

a first backside power rail directly below and connected to a first source-drain epitaxy region of a positive field effect transistor (p-fet) region via a first backside contact vertically aligned with the first source-drain epitaxy region, the first backside power rail directly contacts an upper horizontal surface of the first backside contact and the first backside power rail directly contacts a vertical side surface of the first backside contact. forming a first backside power rail directly below and connected to a first source-drain epitaxy region of a positive field effect transistor (p-fet) region via a first backside contact vertically aligned with the first source-drain epitaxy region, where the first backside power rail directly contacts an upper horizontal surface of the first backside contact and the first backside power rail directly contacts a vertical side surface of the first backside contact.