International business machines corporation (20240194670). ASYMMETRICALLY BONDED INTEGRATED CIRCUIT DEVICES simplified abstract
Contents
ASYMMETRICALLY BONDED INTEGRATED CIRCUIT DEVICES
Organization Name
international business machines corporation
Inventor(s)
Ruqiang Bao of Niskayuna NY (US)
Michael P. Belyansky of Halfmoon NY (US)
Matt Malley of Averill Park NY (US)
ASYMMETRICALLY BONDED INTEGRATED CIRCUIT DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240194670 titled 'ASYMMETRICALLY BONDED INTEGRATED CIRCUIT DEVICES
The abstract describes a multi-layer stacked semiconductor device with a first integrated circuit device and a bonding insulator layer. The bonding insulator layer consists of an insulating material layer and an etch stop layer. Additionally, the device includes a second integrated circuit device stacked over the first one, with a bonding insulator layer between them.
- The semiconductor device features a stacked configuration of integrated circuit devices.
- The bonding insulator layer includes an insulating material layer and an etch stop layer.
- A second integrated circuit device is formed over the first one in a stacked arrangement.
- A bonding insulator layer is present between the second integrated circuit device and the insulating material layer.
- The insulating material layer and the bonding insulator layer are bonded adjacent to one another.
Potential Applications: - This technology can be used in advanced semiconductor devices for various electronic applications. - It can be applied in the development of high-performance computing systems and mobile devices.
Problems Solved: - Provides a solution for integrating multiple integrated circuit devices in a stacked configuration. - Ensures proper insulation and bonding between the different layers of the semiconductor device.
Benefits: - Improved performance and efficiency in semiconductor devices. - Enhanced integration capabilities for complex electronic systems.
Commercial Applications: Title: Advanced Semiconductor Devices for High-Performance Computing This technology can be utilized in the production of advanced processors, memory modules, and other electronic components for high-performance computing systems. The market implications include increased speed and efficiency in computing devices, leading to better overall performance.
Questions about Stacked Semiconductor Devices: 1. How does the bonding insulator layer contribute to the overall performance of the semiconductor device? 2. What are the key advantages of using a multi-layer stacked configuration in semiconductor devices?
Original Abstract Submitted
a multi-layer stacked semiconductor device includes a first integrated circuit device and a bonding insulator layer formed upon the first integrated circuit device. the bonding insulator layer includes an insulating material layer and an etch stop layer. the semiconductor device also includes a second integrated circuit device formed over the first integrated circuit device in a stacked configuration. the semiconductor device also includes a bonding insulator layer formed between the second integrated circuit device and the insulating material layer. the insulating material layer and the bonding insulator layer are bonded adjacent to one another.
