International business machines corporation (20240194602). BACKSIDE POWER DISTRIBUTION NETWORK SUBSTRATE USING A LATTICE MATCHED ETCH STOP LAYER simplified abstract

BACKSIDE POWER DISTRIBUTION NETWORK SUBSTRATE USING A LATTICE MATCHED ETCH STOP LAYER

Organization Name

international business machines corporation

Inventor(s)

Alexander Reznicek of Troy NY (US)

Tsung-Sheng Kang of Ballston Lake NY (US)

Daniel Schmidt of Niskayuna NY (US)

Ruilong Xie of Niskayuna NY (US)

BACKSIDE POWER DISTRIBUTION NETWORK SUBSTRATE USING A LATTICE MATCHED ETCH STOP LAYER - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240194602 titled 'BACKSIDE POWER DISTRIBUTION NETWORK SUBSTRATE USING A LATTICE MATCHED ETCH STOP LAYER

Simplified Explanation

The semiconductor structure described in the patent application consists of multiple layers on a silicon substrate, including an etch stop layer, an epitaxial silicon layer, front-end-of-the-line device layer, back-end-of-the-line device layer, and a carrier wafer.

• The semiconductor structure includes a lattice-matched etch stop layer on a silicon substrate layer.
• The etch stop layer is matched to the lattice of the silicon substrate.
• An epitaxial silicon layer is on top of the etch stop layer.
• Front-end-of-the-line and back-end-of-the-line device layers are stacked on top of each other.
• A carrier wafer is placed on the back-end-of-the-line device layer.

Potential Applications

This technology can be used in the manufacturing of advanced semiconductor devices, integrated circuits, and microelectronics.

Problems Solved

The technology addresses the need for precise layering and etching processes in semiconductor manufacturing to improve device performance and reliability.

Benefits

The semiconductor structure allows for better control over the manufacturing process, leading to enhanced device functionality and durability.

Commercial Applications

• Advanced semiconductor manufacturing
• Integrated circuit production
• Microelectronics industry applications

Prior Art

Researchers can explore prior patents related to semiconductor device manufacturing processes and materials to understand the evolution of this technology.

Frequently Updated Research

Ongoing research in semiconductor materials, device fabrication techniques, and nanotechnology may impact the development and applications of this technology.

Questions about Semiconductor Structures

What are the key advantages of using a lattice-matched etch stop layer in semiconductor manufacturing?

The lattice-matched etch stop layer helps to control the etching process more precisely, leading to improved device performance and reliability.

How does the epitaxial silicon layer contribute to the overall functionality of the semiconductor structure?

The epitaxial silicon layer provides a high-quality crystalline structure for the subsequent device layers, ensuring better electrical properties and performance.

Original Abstract Submitted

a semiconductor structure includes a lattice matched etch stop layer disposed on a silicon substrate layer. the lattice matched etch stop layer is lattice matched to the silicon substrate layer. the semiconductor structure further includes an epitaxial silicon layer disposed on the lattice matched etch stop layer, a front-end-of-the-line device layer disposed on the epitaxial silicon layer, a back-end-of-the-line device layer disposed on the front-end-of-the-line device layer, and a carrier wafer disposed on the back-end-of-the-line device layer.