International business machines corporation (20240194586). SEMICONDUCTOR STRUCTURE WITH BACKSIDE METALLIZATION LAYERS simplified abstract
Contents
SEMICONDUCTOR STRUCTURE WITH BACKSIDE METALLIZATION LAYERS
Organization Name
international business machines corporation
Inventor(s)
Ruilong Xie of Niskayuna NY (US)
Koichi Motoyama of Clifton Park NY (US)
Nicholas Anthony Lanzillo of Wynantskill NY (US)
Oleg Gluschenkov of Tannersville NY (US)
SEMICONDUCTOR STRUCTURE WITH BACKSIDE METALLIZATION LAYERS - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240194586 titled 'SEMICONDUCTOR STRUCTURE WITH BACKSIDE METALLIZATION LAYERS
The semiconductor structure described in the patent application consists of two metallization layers, with the second layer containing a plurality of metal-containing lines, some of which are located within the first metallization layer and separated from it by a dielectric barrier layer.
- The semiconductor structure includes a first metallization layer with metal-containing lines and a second metallization layer with additional metal-containing lines.
- Some of the metal-containing lines in the second layer are positioned within the first metallization layer.
- A dielectric barrier layer isolates the metal-containing lines in the second layer from the first metallization layer.
Potential Applications: - This technology can be used in the manufacturing of integrated circuits and other semiconductor devices. - It may find applications in the telecommunications and electronics industries.
Problems Solved: - Provides a method for efficiently integrating multiple metallization layers in a semiconductor structure. - Helps in reducing signal interference and improving overall performance of semiconductor devices.
Benefits: - Enhanced functionality and performance of semiconductor devices. - Improved signal transmission and reduced crosstalk between metal-containing lines.
Commercial Applications: Title: Semiconductor Structure for Enhanced Signal Transmission in Integrated Circuits This technology can be utilized in the production of advanced integrated circuits for various electronic devices, leading to improved performance and reliability in the market.
Prior Art: Readers interested in exploring prior art related to this technology can refer to patents and research papers in the field of semiconductor manufacturing processes, metallization techniques, and integrated circuit design.
Frequently Updated Research: Stay updated on the latest advancements in semiconductor manufacturing processes, metallization technologies, and integrated circuit design to enhance the performance and efficiency of semiconductor structures.
Questions about Semiconductor Structure with Multiple Metallization Layers: 1. How does the dielectric barrier layer contribute to the isolation of metal-containing lines in the second metallization layer from the first metallization layer? 2. What are the key advantages of integrating multiple metallization layers in a semiconductor structure for signal transmission and device performance?
Original Abstract Submitted
a semiconductor structure includes a first metallization layer having a first plurality of metal containing lines, and a second metallization layer located above the first metallization layer. the second metallization layer includes a second plurality of metal containing lines. a first group of the second plurality of metal containing lines is disposed within the first metallization layer. the first group of the second plurality of metal containing lines is isolated from the first metallization layer by a dielectric barrier layer.
