International business machines corporation (20240194236). NEGATIVE CAPACITANCE FOR FERROELECTRIC CAPACITIVE MEMORY CELL simplified abstract

NEGATIVE CAPACITANCE FOR FERROELECTRIC CAPACITIVE MEMORY CELL

Organization Name

international business machines corporation

Inventor(s)

Takashi Ando of Eastchester NY (US)

Reinaldo Vega of Mahopac NY (US)

David Wolpert of Poughkeepsie NY (US)

Nicholas Anthony Lanzillo of Wynantskill NY (US)

NEGATIVE CAPACITANCE FOR FERROELECTRIC CAPACITIVE MEMORY CELL - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240194236 titled 'NEGATIVE CAPACITANCE FOR FERROELECTRIC CAPACITIVE MEMORY CELL

The abstract describes a capacitive memory cell consisting of an electrode, a tunneling barrier layer, a charge trapping layer, a ferroelectric layer, and another electrode.

• Simplified Explanation: The patent application details a memory cell design with specific layers for improved performance.

• Key Features and Innovation:

- Electrode, tunneling barrier layer, charge trapping layer, ferroelectric layer, and another electrode are arranged in a specific configuration. - The design aims to enhance the memory cell's functionality and efficiency.

• Potential Applications:

- Memory storage devices - Electronic devices requiring non-volatile memory

• Problems Solved:

- Improved memory cell performance - Enhanced data retention capabilities

• Benefits:

- Increased memory cell efficiency - Enhanced data storage reliability

• Commercial Applications:

- Memory chip manufacturing industry - Consumer electronics market

• Prior Art:

- Researchers can explore prior patents related to memory cell design and ferroelectric materials.

• Frequently Updated Research:

- Stay updated on advancements in memory cell technology and ferroelectric materials research.

Questions about Capacitive Memory Cell: 1. How does the specific layer configuration in the memory cell contribute to its performance? 2. What are the potential challenges in implementing this memory cell design in commercial products?

Original Abstract Submitted

a capacitive memory cell includes an electrode, a tunneling barrier layer in direct contact with the electrode, a charge trapping layer in direct contact with the tunneling barrier layer, a ferroelectric layer in direct contact with the charge trapping layer, and another electrode in direct contact with the ferroelectric layer.