International business machines corporation (20240188448). MULTIPLE LAYERS OF VOID-FREE INTERLAYER DIELECTRIC BETWEEN ADJACENT MAGNETORESISTIVE RANDOM-ACCESS MEMORY DEVICES simplified abstract

MULTIPLE LAYERS OF VOID-FREE INTERLAYER DIELECTRIC BETWEEN ADJACENT MAGNETORESISTIVE RANDOM-ACCESS MEMORY DEVICES

Organization Name

international business machines corporation

Inventor(s)

Oscar Van Der Straten of Guilderland Center NY (US)

Chih-Chao Yang of Glenmont NY (US)

MULTIPLE LAYERS OF VOID-FREE INTERLAYER DIELECTRIC BETWEEN ADJACENT MAGNETORESISTIVE RANDOM-ACCESS MEMORY DEVICES - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240188448 titled 'MULTIPLE LAYERS OF VOID-FREE INTERLAYER DIELECTRIC BETWEEN ADJACENT MAGNETORESISTIVE RANDOM-ACCESS MEMORY DEVICES

Simplified Explanation

The semiconductor structure described in the abstract is for a magnetic tunnel junction (MTJ) pillar in a magnetoresistive random-access memory (MRAM) device. Here are some key points to explain the patent/innovation:

• Each material layer of the MTJ pillar has a different width.
• The top electrode has a tapered shape.
• There is a dielectric encapsulation layer around both the reference layer and the free layer.
• The dielectric encapsulation material surrounding the sidewall of the reference layer is different from that around the sidewall of the free layer.

Potential Applications

This technology could be used in MRAM devices, which are non-volatile memory devices with fast read and write speeds.

Problems Solved

This innovation helps in improving the performance and reliability of MRAM devices by optimizing the structure of the MTJ pillar.

Benefits

The benefits of this technology include enhanced data storage capabilities, increased efficiency, and improved overall performance of MRAM devices.

Potential Commercial Applications

• "Enhancing MRAM Performance with Innovative MTJ Pillar Structure"

Possible Prior Art

One possible prior art could be research or patents related to MRAM devices with different MTJ pillar structures.

How does this innovation compare to existing MRAM technologies in terms of performance and reliability?

This article does not provide a direct comparison with existing MRAM technologies in terms of performance and reliability.

What are the specific materials used for the dielectric encapsulation layers in this semiconductor structure?

The article does not specify the exact materials used for the dielectric encapsulation layers in this semiconductor structure.

Original Abstract Submitted

a semiconductor structure with a magnetic tunnel junction (mtj) pillar for a magnetoresistive random-access memory (mram) device, where each material layer of the mtj pillar resides on a lower material layer of the mtj pillar with a different width. embodiments of the present invention provide a top electrode with a tapered shape. embodiments of the present invention also provide a dielectric encapsulation layer around the reference layer and around the free layer. the dielectric encapsulation material surrounding a sidewall of the reference layer is composed of a different dielectric encapsulation material than the dielectric encapsulation around the sidewall of the free layer.