International business machines corporation (20240188446). MRAM DEVICE WITH WRAP-AROUND TOP ELECTRODE simplified abstract
Contents
MRAM DEVICE WITH WRAP-AROUND TOP ELECTRODE
Organization Name
international business machines corporation
Inventor(s)
Shravana Kumar Katakam of Lehi UT (US)
Ashim Dutta of Clifton Park NY (US)
Chih-Chao Yang of Glenmont NY (US)
MRAM DEVICE WITH WRAP-AROUND TOP ELECTRODE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240188446 titled 'MRAM DEVICE WITH WRAP-AROUND TOP ELECTRODE
Simplified Explanation
The semiconductor device described in the abstract includes a magnetic tunnel junction (MTJ) stack with an upper word line surrounding the vertical side surfaces of the stack. Additionally, the device features an upper word line that surrounds the vertical side surfaces and the upper surface of a reference layer within the MTJ stack. The method outlined involves forming the MTJ stack and a dielectric encapsulation layer that surrounds the vertical side surfaces of various components within the stack.
- Explanation of the patent/innovation:
- The innovation involves incorporating an upper word line that surrounds the vertical side surfaces of the MTJ stack, enhancing the performance and functionality of the semiconductor device. - The method of forming a dielectric encapsulation layer around the vertical side surfaces of the components within the MTJ stack improves the durability and reliability of the device.
Potential applications of this technology: - Data storage devices - Magnetic sensors - Spintronics applications
Problems solved by this technology: - Improved data retention and reliability in semiconductor devices - Enhanced performance and functionality of magnetic tunnel junction stacks
Benefits of this technology: - Increased efficiency in data storage and retrieval - Enhanced durability and reliability of semiconductor devices
Potential commercial applications of this technology:
- Improving Data Storage Efficiency with Magnetic Tunnel Junction Technology ###
Possible prior art: - Previous methods of encapsulating components within a semiconductor device - Existing techniques for enhancing the performance of magnetic tunnel junction stacks
Unanswered questions:
- How does the presence of the upper word line impact the overall performance of the semiconductor device?
Answer: The upper word line surrounding the vertical side surfaces of the MTJ stack helps improve the efficiency and functionality of the device by enhancing the communication between different components within the stack.
- What specific materials are used in the dielectric encapsulation layer, and how do they contribute to the durability of the semiconductor device?
Answer: The dielectric encapsulation layer typically consists of materials with high insulating properties to protect the components within the MTJ stack from external factors and ensure long-term reliability.
Original Abstract Submitted
a semiconductor device including a magnetic tunnel junction (mtj) stack and an upper word line of the mtj stack surrounding vertical side surfaces of the mtj stack. a semiconductor device including a magnetic tunnel junction (mtj) stack and an upper word line for the mtj stack surrounding vertical side surfaces and an upper surface of a reference layer of the mtj stack. a method including forming a forming a magnetic tunnel junction (mtj) stack and forming a dielectric encapsulation layer surrounding vertical side surfaces of a top electrode, a free layer, a tunneling barrier, a reference layer and a bottom electrode of the mtj stack.
