International business machines corporation (20240188282). STRUCTURE WITH FRONTSIDE AND BACKSIDE DRAMS simplified abstract

STRUCTURE WITH FRONTSIDE AND BACKSIDE DRAMS

Organization Name

international business machines corporation

Inventor(s)

Min Gyu Sung of Latham NY (US)

Kangguo Cheng of Schenectady NY (US)

Ruilong Xie of Niskayuna NY (US)

Chanro Park of Clifton Park NY (US)

Julien Frougier of Albany NY (US)

STRUCTURE WITH FRONTSIDE AND BACKSIDE DRAMS - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240188282 titled 'STRUCTURE WITH FRONTSIDE AND BACKSIDE DRAMS

Simplified Explanation

The semiconductor structure described in the abstract features a high cell density with a frontside dynamic access memory (DRAM) located on the frontside of a semiconductor substrate, and a backside DRAM located on the backside of the substrate. Peripheral transistors are positioned on the frontside of the semiconductor substrate at the same level as the frontside transistors of the frontside DRAM.

• High cell density semiconductor structure
• Frontside DRAM and backside DRAM
• Peripheral transistors on the frontside at the same level as frontside DRAM transistors

Potential Applications

The technology could be applied in:

• High-performance computing
• Data storage devices
• Mobile devices

Problems Solved

This technology addresses:

• Increasing demand for higher cell density in semiconductor structures
• Need for efficient memory access in electronic devices
• Space constraints in semiconductor design

Benefits

The benefits of this technology include:

• Improved memory access speed
• Higher data storage capacity
• Enhanced overall performance of electronic devices

Potential Commercial Applications

This technology could be utilized in:

• Semiconductor manufacturing industry
• Consumer electronics market
• Data center infrastructure

Possible Prior Art

One possible prior art could be the use of stacked DRAM technology in semiconductor structures to increase memory density and performance.

How does this technology compare to existing semiconductor structures in terms of power consumption?

This article does not provide information on the power consumption of the semiconductor structure compared to existing technologies.

What are the potential challenges in integrating this technology into current manufacturing processes?

The article does not address the potential challenges in integrating this technology into current manufacturing processes.

Original Abstract Submitted

a semiconductor structure having a high cell density is provided in which a frontside dynamic access memory (dram) is located on a frontside of a semiconductor substrate, and a backside dram is located on a backside of the semiconductor substrate. peripheral transistors can be located on the frontside of the semiconductor substrate and at a same level as frontside transistors of the frontside dram.