International business machines corporation (20240186401). Replacement Metal Gate Integration for Gate All Around Transistors simplified abstract

Replacement Metal Gate Integration for Gate All Around Transistors

Organization Name

international business machines corporation

Inventor(s)

Ruqiang Bao of Niskayuna NY (US)

Effendi Leobandung of Stormville NY (US)

Eric Miller of Albany NY (US)

Replacement Metal Gate Integration for Gate All Around Transistors - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240186401 titled 'Replacement Metal Gate Integration for Gate All Around Transistors

Simplified Explanation

The abstract describes a semiconductor device with separate gate all around replacement metal gates for transistors of different polarities on a wafer.

• The semiconductor device includes at least a first transistor (e.g., pfet) and a second transistor (e.g., nfet) on the wafer with gate electrodes having vertically adjoining sidewalls.
• The gate electrodes of the transistors can have different workfunction-setting metals, compositions, thicknesses, etc.
• The gate dielectric beneath the gate electrodes can also vary in composition, thickness, etc.
• A method of fabricating these semiconductor devices is also provided.

Potential Applications

The technology described in this patent application could be applied in:

• Advanced semiconductor manufacturing processes
• High-performance computing systems
• Mobile devices and smartphones

Problems Solved

This technology helps in:

• Improving transistor performance
• Enhancing overall device efficiency
• Enabling better control over transistor characteristics

Benefits

The benefits of this technology include:

• Increased speed and efficiency of semiconductor devices
• Enhanced functionality and performance of electronic devices
• Potential for smaller and more power-efficient devices

Potential Commercial Applications

The potential commercial applications of this technology could be seen in:

• Semiconductor industry for advanced chip manufacturing
• Consumer electronics market for high-performance devices
• Telecommunications sector for improved network infrastructure

Possible Prior Art

One possible prior art for this technology could be the development of gate all around transistors with different gate materials for enhancing device performance.

How does this technology compare to existing transistor designs in terms of power consumption and speed?

This article does not provide a direct comparison with existing transistor designs in terms of power consumption and speed. Further research or testing would be needed to determine the specific advantages of this technology in these aspects.

What are the potential challenges in scaling up the production of semiconductor devices using this technology?

The article does not address the potential challenges in scaling up production using this technology. Factors such as cost, manufacturing complexity, and yield rates could pose challenges that need to be explored further.

Original Abstract Submitted

semiconductor devices having separate (i.e., non-overlapping) gate all around replacement metal gates are provided. in one aspect, a semiconductor device includes: a wafer; and at least a first transistor of a first polarity (e.g., a pfet) and a second transistor of a second polarity (e.g., an nfet) on the wafer, where a gate electrode of the first transistor and a gate electrode of the second transistor have a single pair of vertically adjoining sidewalls. the workfunction-setting metals employed in the gate electrodes of the first and second transistors can vary, as can the composition, thickness, etc. of the gate dielectric that is present beneath the gate electrodes. a method of fabricating the present semiconductor devices is also provided.