International business machines corporation (20240186387). VIA AND SOURCE/DRAIN CONTACT LANDING UNDER POWER RAIL simplified abstract

VIA AND SOURCE/DRAIN CONTACT LANDING UNDER POWER RAIL

Organization Name

international business machines corporation

Inventor(s)

Ruilong Xie of Niskayuna NY (US)

Min Gyu Sung of Latham NY (US)

Chanro Park of Clifton Park NY (US)

Kangguo Cheng of Schenectady NY (US)

Julien Frougier of Albany NY (US)

VIA AND SOURCE/DRAIN CONTACT LANDING UNDER POWER RAIL - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240186387 titled 'VIA AND SOURCE/DRAIN CONTACT LANDING UNDER POWER RAIL

Simplified Explanation

The microelectronic structure described in the abstract includes a first nano device with multiple transistors, a second nano device parallel to the first one, a gate cut between them, and a source/drain contact connecting the source/drain of the first device to the source/drain of the second device.

• The structure consists of a first nano device with multiple transistors, including at least one source/drain, and a second nano device with multiple transistors, including at least two source/drains.
• A gate cut separates the first nano device from the second nano device.
• A source/drain contact connects the source/drain of the first nano device to at least one of the source/drains of the second nano device, extending parallel to both devices.

Potential Applications

The technology described in the patent application could be applied in:

• Advanced microelectronics
• Nanotechnology research
• Semiconductor industry

Problems Solved

This technology addresses issues related to:

• Integration of multiple nano devices
• Efficient connection between different nano devices
• Enhancing performance in microelectronic structures

Benefits

The benefits of this technology include:

• Improved functionality in microelectronic devices
• Enhanced connectivity between nano devices
• Potential for higher performance and efficiency in electronic systems

Potential Commercial Applications

The potential commercial applications of this technology could be in:

• Semiconductor manufacturing
• Electronics industry
• Research and development of nanoscale devices

Possible Prior Art

One possible prior art for this technology could be the integration of multiple nano devices in a single microelectronic structure, but the specific configuration described in the patent application may be novel and inventive.

How does this technology compare to existing methods of connecting nano devices in microelectronic structures?

This article does not provide a direct comparison with existing methods of connecting nano devices in microelectronic structures. Further research or analysis would be needed to determine the advantages and disadvantages of this new approach.

What are the potential challenges in scaling up this technology for mass production?

The article does not address the potential challenges in scaling up this technology for mass production. Factors such as manufacturing costs, scalability, and compatibility with existing production processes could be significant considerations in commercializing this innovation.

Original Abstract Submitted

a microelectronic structure including a first nano device that includes a plurality of first transistors and the plurality of first transistors includes at least one first source/drain. a second nano device includes a plurality of second transistors and the second nano device is oriented parallel to the first nano device. the plurality of second transistors includes at least two second source/drains. a gate cut located between the first nano device and the second nano device. a source/drain contact connected to the at least one first source/drain and is connected to at least one of the second source/drains. a portion of the source/drain contact extends parallel to the first nano device and the second nano device.