International business machines corporation (20240186376). VERTICAL TRANSISTOR WITH REDUCED CELL HEIGHT simplified abstract
Contents
- 1 VERTICAL TRANSISTOR WITH REDUCED CELL HEIGHT
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 VERTICAL TRANSISTOR WITH REDUCED CELL HEIGHT - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
VERTICAL TRANSISTOR WITH REDUCED CELL HEIGHT
Organization Name
international business machines corporation
Inventor(s)
Brent A. Anderson of Jericho VT (US)
Ruilong Xie of Niskayuna NY (US)
Albert M. Chu of Nashua NH (US)
Junli Wang of Slingerlands NY (US)
VERTICAL TRANSISTOR WITH REDUCED CELL HEIGHT - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240186376 titled 'VERTICAL TRANSISTOR WITH REDUCED CELL HEIGHT
Simplified Explanation
The semiconductor structure described in the patent application includes a vertical semiconductor channel region, a bottom source drain region on a substrate below the channel region, and a metal gate surrounding the vertical semiconductor channel region with one end aligned with the metal gate.
- Vertical semiconductor channel region
- Bottom source drain region on substrate
- Metal gate surrounding vertical semiconductor channel region
- First end of vertical semiconductor channel region aligned with first end of metal gate
Potential Applications
The technology described in the patent application could be applied in the following areas:
- High-performance transistors
- Power electronics
- Integrated circuits
Problems Solved
The semiconductor structure addresses the following issues:
- Improved performance of semiconductor devices
- Enhanced control over electron flow
- Reduction in power consumption
Benefits
The technology offers the following benefits:
- Increased efficiency in electronic devices
- Enhanced reliability of semiconductor components
- Potential for miniaturization of electronic circuits
Potential Commercial Applications
The semiconductor structure could find applications in various industries, including:
- Consumer electronics
- Automotive sector
- Telecommunications industry
Possible Prior Art
One possible prior art for this technology could be the use of metal gates in semiconductor devices to control electron flow. Another could be the integration of source drain regions in vertical semiconductor structures.
Unanswered Questions
How does the alignment of the vertical semiconductor channel region with the metal gate impact device performance?
The alignment of the vertical semiconductor channel region with the metal gate ensures precise control over electron flow, but the specific effects on device performance are not detailed in the abstract.
Are there any limitations to the design of the semiconductor structure described in the patent application?
While the abstract highlights the key features of the semiconductor structure, it does not mention any potential limitations or challenges that may arise during implementation or manufacturing.
Original Abstract Submitted
a semiconductor structure including a vertical semiconductor channel region, a bottom source drain region arranged on a substrate below the vertical semiconductor channel region, and a metal gate disposed around the vertical semiconductor channel region, where a first end of the vertical semiconductor channel region is aligned with a first end of the metal gate.
