International business machines corporation (20240186325). STACKED TRANSISTORS HAVING BOTTOM CONTACT WITH LARGER SILICIDE simplified abstract

STACKED TRANSISTORS HAVING BOTTOM CONTACT WITH LARGER SILICIDE

Organization Name

international business machines corporation

Inventor(s)

Koichi Motoyama of Clifton Park NY (US)

Ruilong Xie of Niskayuna NY (US)

Julien Frougier of Albany NY (US)

Nicolas Jean Loubet of GUILDERLAND NY (US)

Kangguo Cheng of Schenectady NY (US)

STACKED TRANSISTORS HAVING BOTTOM CONTACT WITH LARGER SILICIDE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240186325 titled 'STACKED TRANSISTORS HAVING BOTTOM CONTACT WITH LARGER SILICIDE

Simplified Explanation

The abstract describes a patent application for a stacked transistor structure with specific features such as different widths for source drain regions, a metal silicide layer, replacement spacer, and top gate spacer.

• The bottom source drain region is wider than the top source drain region.
• A metal silicide layer is present between the bottom source drain region and the bottom contact structure.
• The metal silicide layer has a width larger than the bottom contact structure.
• A replacement spacer surrounds the bottom contact structure.
• A top gate spacer separates the replacement spacer from the gate conductor.

Potential Applications

The technology described in this patent application could be applied in the manufacturing of advanced semiconductor devices, such as high-performance transistors for integrated circuits.

Problems Solved

This technology addresses the challenge of improving the performance and efficiency of stacked transistor structures by optimizing the design of source drain regions and incorporating metal silicide layers for enhanced conductivity.

Benefits

The benefits of this technology include increased transistor performance, improved electrical contact between components, and potentially higher overall efficiency in semiconductor devices.

Potential Commercial Applications

The technology outlined in this patent application could have commercial applications in the semiconductor industry, particularly in the development of next-generation processors, memory chips, and other electronic devices.

Possible Prior Art

One possible prior art for this technology could be the use of metal silicide layers in semiconductor devices to improve conductivity and reduce resistance. Additionally, the concept of different widths for source drain regions may have been explored in previous transistor designs.

How does this technology compare to existing transistor structures in terms of performance and efficiency?

This article does not provide a direct comparison between this technology and existing transistor structures in terms of performance and efficiency. Further research or testing would be needed to determine the specific advantages of this innovation.

What are the potential challenges or limitations of implementing this technology in large-scale semiconductor manufacturing processes?

The article does not address the potential challenges or limitations of implementing this technology in large-scale semiconductor manufacturing processes. Factors such as cost, scalability, and compatibility with existing fabrication techniques could be important considerations that are not covered in the abstract.

Original Abstract Submitted

a stacked transistor structure including a top source drain region above a bottom source drain region, where a width of the bottom source drain region is greater than a width of the top source drain region, a bottom contact structure directly above and in electrical contact with the bottom source drain region, a metal silicide between the bottom source drain region and the bottom contact structure, the metal silicide having a width larger than a width of the bottom contact structure; a replacement spacer surrounding the bottom contact structure; and a top gate spacer separating the replacement spacer from a gate conductor.