International business machines corporation (20240186246). POWER GATING TRANSISTOR FOR BSPDN simplified abstract
Contents
- 1 POWER GATING TRANSISTOR FOR BSPDN
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 POWER GATING TRANSISTOR FOR BSPDN - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
POWER GATING TRANSISTOR FOR BSPDN
Organization Name
international business machines corporation
Inventor(s)
Tao Li of Slingerlands NY (US)
Ruilong Xie of Niskayuna NY (US)
POWER GATING TRANSISTOR FOR BSPDN - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240186246 titled 'POWER GATING TRANSISTOR FOR BSPDN
Simplified Explanation
The microelectronic architecture described in the patent application includes a logic device, a header gate transistor, and a footer gate transistor. The header gate transistor is located adjacent to one side of the logic device, while the footer gate transistor is located adjacent to the opposite side. Both gate transistors have a parallel orientation to the logic device and are connected to either a VSS source or a VDD source. The logic device is connected to the VSS and VDD sources through either the header gate transistor or the footer gate transistor.
- Logic device with header and footer gate transistors
- Gate transistors have parallel orientation to logic device
- Header gate transistor connected to VSS or VDD source
- Footer gate transistor connected to different source than header gate transistor
- Logic device connected to VSS and VDD sources through gate transistors
Potential Applications
The technology described in the patent application could be applied in:
- Integrated circuits
- Microprocessors
- Memory devices
Problems Solved
This technology helps in:
- Enhancing circuit performance
- Improving power efficiency
- Reducing signal interference
Benefits
The benefits of this technology include:
- Increased speed and efficiency of electronic devices
- Enhanced reliability and stability of circuits
- Lower power consumption
Potential Commercial Applications
The potential commercial applications of this technology could be in:
- Consumer electronics
- Automotive industry
- Telecommunications sector
Possible Prior Art
One possible prior art related to this technology is the use of gate transistors in microelectronic architectures to control the flow of current and improve circuit performance.
Unanswered Questions
How does this technology compare to existing microelectronic architectures in terms of power consumption?
The patent application does not provide specific data on power consumption comparisons with existing architectures.
Are there any limitations to the scalability of this technology for different types of logic devices?
The patent application does not address any potential limitations to the scalability of this technology for various types of logic devices.
Original Abstract Submitted
a microelectronic architecture including a logic device and a header gate transistor located adjacent to a first side of the logic device. the header gate transistor has a parallel orientation to the logic device, and the header gate transistor is connected to a vss source or a vdd source. aa footer gate transistor located adjacent to a second side of the logic device and the footer gate transistor has parallel orientation to the logic device. the first side and the second side are opposite sides of the logic device and the footer gate transistor is connected to a vss source or a vdd source. the footer gate transistor is connected to a different source than the header gate transistor and the logic device is connected to the vss source and the vdd source through either footer gate transistor and the header gate transistor.
