International business machines corporation (20240186242). Wire Structure for Low Resistance Interconnects simplified abstract

Wire Structure for Low Resistance Interconnects

Organization Name

international business machines corporation

Inventor(s)

Oscar Van Der Straten of Guilderland Center NY (US)

Koichi Motoyama of Clifton Park NY (US)

Chih-Chao Yang of Glenmont NY (US)

Wire Structure for Low Resistance Interconnects - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240186242 titled 'Wire Structure for Low Resistance Interconnects

Simplified Explanation

The abstract describes interconnect wire structures with uniform line profile and height, embedded in interlayer dielectrics with vertical and flared sidewalls, separated by barrier layers.

• Interconnect wire structures with uniform line profile and height
• Embedded in interlayer dielectrics with vertical and flared sidewalls
• Separated by barrier layers
• Method for forming the interconnect wires

Potential Applications

This technology can be applied in semiconductor manufacturing, specifically in the fabrication of integrated circuits and electronic devices.

Problems Solved

1. Inconsistent line profiles and heights in interconnect wire structures 2. Difficulty in achieving uniformity in interlayer dielectrics

Benefits

1. Improved performance and reliability of integrated circuits 2. Enhanced manufacturing efficiency and yield

Potential Commercial Applications

Optimizing interconnect wire structures in semiconductor devices for improved functionality and performance.

Possible Prior Art

Previous methods for forming interconnect wire structures may have lacked the uniformity and precision achieved by the techniques described in this patent application.

How does this technology compare to existing methods for fabricating interconnect wire structures in terms of cost-effectiveness and scalability?

The article does not provide information on the cost-effectiveness and scalability of the proposed technology compared to existing methods.

What are the potential challenges or limitations in implementing this technology in large-scale semiconductor manufacturing processes?

The article does not address the potential challenges or limitations that may arise when implementing this technology in large-scale semiconductor manufacturing processes.

Original Abstract Submitted

interconnect wire structures and techniques for fabrication thereof with uniform line profile and height are provided. in one aspect, a structure is provided that includes: a wafer; a first interlayer dielectric disposed on the wafer; a second interlayer dielectric disposed on the first interlayer dielectric; and an interconnect wire(s) embedded in the first interlayer dielectric and the second interlayer dielectric, where a first portion of a top half of the interconnect wire(s) has vertical sidewalls, and where a second portion of the top half of the interconnect wire(s) and a bottom half of the interconnect wire(s) have flared sidewalls. a first barrier layer and a (potentially different) second barrier layer can separate the bottom half and top half of the interconnect wire(s) from the first and second interlayer dielectrics. a method for forming the interconnect wire(s) is also provided.