International business machines corporation (20240180045). Diamond Shaped Magnetic Random Access Memory simplified abstract
Contents
- 1 Diamond Shaped Magnetic Random Access Memory
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 Diamond Shaped Magnetic Random Access Memory - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
Diamond Shaped Magnetic Random Access Memory
Organization Name
international business machines corporation
Inventor(s)
Oscar Van Der Straten of Guilderland Center NY (US)
Diamond Shaped Magnetic Random Access Memory - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240180045 titled 'Diamond Shaped Magnetic Random Access Memory
Simplified Explanation
The abstract describes an MRAM device with memory cell pillars having a diamond-shaped profile and improved dielectric gapfill, as well as individually configurable bottom and top encapsulation layers.
- Memory cell pillars with diamond-shaped profile
- Interlayer dielectric fully filling gaps between memory cell pillars
- Each memory cell pillar includes reference layer, free layer, tunnel barrier, first encapsulation layer, and second encapsulation layer
- First encapsulation layer can include oxide dielectric material, second encapsulation layer can include nitride dielectric material
- Method of fabricating the MRAM devices is provided
Potential Applications
The technology described in the patent application could be applied in the manufacturing of MRAM devices for use in various electronic devices such as computers, smartphones, and IoT devices.
Problems Solved
The innovation addresses the issue of dielectric gapfill in MRAM devices, ensuring proper insulation and functionality of the memory cell pillars.
Benefits
The benefits of this technology include improved performance and reliability of MRAM devices, as well as potentially reducing manufacturing costs.
Potential Commercial Applications
The technology could find commercial applications in the semiconductor industry for producing advanced MRAM devices with enhanced features and capabilities.
Possible Prior Art
One possible prior art could be the use of different dielectric materials in MRAM devices to improve performance and reliability.
Unanswered Questions
How does the fabrication process of these MRAM devices compare to traditional methods?
The article does not provide a direct comparison between the new fabrication techniques and traditional methods.
Are there any limitations or drawbacks to using the proposed encapsulation layers in MRAM devices?
The potential limitations or drawbacks of the encapsulation layers are not discussed in the article.
Original Abstract Submitted
mram device structures and techniques for fabrication thereof with improved dielectric gapfill and individually configurable bottom and top encapsulation layers are provided. in one aspect, an mram device includes: memory cell pillars having a diamond shaped profile; and an interlayer dielectric fully filling gaps between the memory cell pillars. for instance, each of the memory cell pillars can include a reference layer, a free layer, a tunnel barrier between the reference layer and the free layer, a first encapsulation layer alongside the reference layer, and a second encapsulation layer alongside the free layer; and an interlayer dielectric fully filling gaps between the memory cell pillars. optionally, the first encapsulation layer can include an oxide dielectric material, and the second encapsulation layer can include a nitride dielectric material. a method of fabricating the present mram devices is also provided.
