International business machines corporation (20240179924). THREE DIMENSIONAL RERAM DEVICE simplified abstract
Contents
- 1 THREE DIMENSIONAL RERAM DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 THREE DIMENSIONAL RERAM DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
THREE DIMENSIONAL RERAM DEVICE
Organization Name
international business machines corporation
Inventor(s)
Min Gyu Sung of Latham NY (US)
Soon-Cheon Seo of Glenmont NY (US)
Heng Wu of Santa Clara CA (US)
Julien Frougier of Albany NY (US)
Chen Zhang of Guilderland NY (US)
Ruilong Xie of Niskayuna NY (US)
THREE DIMENSIONAL RERAM DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240179924 titled 'THREE DIMENSIONAL RERAM DEVICE
Simplified Explanation
The abstract describes a resistive random access memory (ReRAM) device with vertically stacked ReRAM cells, formed by a first electrode, a resistive switching element layer, and multiple second electrodes.
- The ReRAM device consists of a first electrode, a resistive switching element layer, and multiple second electrodes.
- Protruding portions of the first electrode and the resistive switching element layer overlap with the second electrodes in a vertical direction, forming vertically stacked ReRAM cells.
Potential Applications
The technology can be applied in:
- Non-volatile memory devices
- Neuromorphic computing
- Internet of Things (IoT) devices
Problems Solved
- Increased data storage capacity
- Faster access times
- Lower power consumption
Benefits
- Improved memory performance
- Enhanced device reliability
- Scalability for future technological advancements
Potential Commercial Applications
Optimized for:
- Consumer electronics
- Data centers
- Automotive industry
Possible Prior Art
Prior art in resistive random access memory technology includes:
- Crossbar arrays
- Memristor devices
Unanswered Questions
How does the resistive switching element layer affect the performance of the ReRAM device?
The abstract does not provide specific details on the role of the resistive switching element layer in the device's operation.
What materials are used in the fabrication of the ReRAM device?
The abstract does not mention the specific materials utilized in the construction of the ReRAM device.
Original Abstract Submitted
a resistive random access memory (reram) device and a method for forming the device are provided. the reram device includes a first electrode, a resistive switching element layer in contact with the first electrode, and a plurality of second electrodes in contact with the resistive switching element layer. protruding portions of the first electrode and the resistive switching element layer overlap with the plurality of second electrodes in a vertical direction of the reram device to form a plurality of vertically stacked reram cells.
