International business machines corporation (20240178292). SEPARATE EPITAXY IN MONOLITHIC STACKED AND STEPPED NANOSHEETS simplified abstract
Contents
- 1 SEPARATE EPITAXY IN MONOLITHIC STACKED AND STEPPED NANOSHEETS
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEPARATE EPITAXY IN MONOLITHIC STACKED AND STEPPED NANOSHEETS - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 How does the stepped formation of the second nanosheet stack impact device performance?
- 1.11 What are the potential challenges in scaling up this technology for mass production?
- 1.12 Original Abstract Submitted
SEPARATE EPITAXY IN MONOLITHIC STACKED AND STEPPED NANOSHEETS
Organization Name
international business machines corporation
Inventor(s)
Indira Seshadri of Niskayuna NY (US)
Jay William Strane of Warwick NY (US)
Shogo Mochizuki of Mechanicville NY (US)
SEPARATE EPITAXY IN MONOLITHIC STACKED AND STEPPED NANOSHEETS - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240178292 titled 'SEPARATE EPITAXY IN MONOLITHIC STACKED AND STEPPED NANOSHEETS
Simplified Explanation
The semiconductor structure described in the patent application includes semiconductor layers of two nanosheet stacks, with the second nanosheet stack having a stepped formation with respect to the first nanosheet stack. Additionally, there are first and second epitaxial growths formed adjacent to the semiconductor layers of the respective nanosheet stacks, with the second epitaxial growth having a greater volume than the first epitaxial growth.
- Semiconductor structure with two nanosheet stacks
- Second nanosheet stack has a stepped formation compared to the first nanosheet stack
- First and second epitaxial growths formed adjacent to the semiconductor layers
- Second epitaxial growth has a greater volume than the first epitaxial growth
Potential Applications
The technology described in the patent application could potentially be used in:
- Advanced semiconductor devices
- High-performance electronic components
- Next-generation computing systems
Problems Solved
This technology helps address the following issues:
- Enhancing semiconductor performance
- Improving device efficiency
- Enabling more compact and powerful electronic devices
Benefits
The semiconductor structure offers the following benefits:
- Increased device speed and efficiency
- Enhanced overall performance
- Potential for smaller and more energy-efficient devices
Potential Commercial Applications
The technology could find commercial applications in:
- Semiconductor manufacturing industry
- Electronics and consumer electronics sector
- Research and development of advanced electronic devices
Possible Prior Art
One possible prior art for this technology could be the development of semiconductor structures with multiple nanosheet stacks and epitaxial growths, but with different configurations and characteristics.
Unanswered Questions
How does the stepped formation of the second nanosheet stack impact device performance?
The article does not delve into the specific effects of the stepped formation on the performance of the semiconductor structure. Further research and testing may be needed to understand the implications fully.
What are the potential challenges in scaling up this technology for mass production?
The article does not address the scalability of the manufacturing process for this semiconductor structure. It would be essential to investigate the challenges and feasibility of large-scale production in real-world applications.
Original Abstract Submitted
a semiconductor structure is presented including semiconductor layers of a first nanosheet stack, semiconductor layers of a second nanosheet stack formed over and having a stepped nanosheet formation with respect to the semiconductor layers of the first nanosheet stack, a first epitaxial growth formed adjacent the semiconductor layers of the first nanosheet stack, and a second epitaxial growth formed adjacent the semiconductor layers of the second nanosheet stack such that the second epitaxial growth has a stepped formation with respect to the first epitaxial growth. the second epitaxial growth has a volume greater than a volume of the first epitaxial growth.
