International business machines corporation (20240178156). SUPPORT DIELECTRIC FIN TO PREVENT GATE FLOP-OVER IN NANOSHEET TRANSISTORS simplified abstract
Contents
- 1 SUPPORT DIELECTRIC FIN TO PREVENT GATE FLOP-OVER IN NANOSHEET TRANSISTORS
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SUPPORT DIELECTRIC FIN TO PREVENT GATE FLOP-OVER IN NANOSHEET TRANSISTORS - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SUPPORT DIELECTRIC FIN TO PREVENT GATE FLOP-OVER IN NANOSHEET TRANSISTORS
Organization Name
international business machines corporation
Inventor(s)
Min Gyu Sung of Latham NY (US)
Ruilong Xie of Niskayuna NY (US)
Julien Frougier of Albany NY (US)
Chanro Park of Clifton Park NY (US)
SUPPORT DIELECTRIC FIN TO PREVENT GATE FLOP-OVER IN NANOSHEET TRANSISTORS - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240178156 titled 'SUPPORT DIELECTRIC FIN TO PREVENT GATE FLOP-OVER IN NANOSHEET TRANSISTORS
Simplified Explanation
The patent application relates to nanosheet transistors with support dielectric pillars, where the support dielectric pillar stabilizes the active transistor fin.
- Nanosheet transistors with support dielectric pillars:
- Active transistor fin and support dielectric pillar work together. - Support dielectric pillar stabilizes the active transistor fin.
Potential Applications
Nanosheet transistors with support dielectric pillars could be used in: - High-performance computing - Advanced electronics - Nanotechnology research
Problems Solved
This technology addresses issues such as: - Stability of active transistor fins - Performance optimization in nanoscale devices
Benefits
The benefits of this technology include: - Improved transistor performance - Enhanced device reliability - Potential for miniaturization
Potential Commercial Applications
The potential commercial applications of this technology could be seen in: - Semiconductor industry - Electronics manufacturing - Research and development companies
Possible Prior Art
Prior art in the field of nanosheet transistors and dielectric pillars may include: - Research papers on nanoscale transistor design - Patents related to semiconductor device fabrication
Unanswered Questions
How does the support dielectric pillar affect the overall performance of the nanosheet transistor?
The support dielectric pillar plays a crucial role in stabilizing the active transistor fin, but the specific impact on performance metrics like speed, power consumption, and reliability is not explicitly discussed in the abstract.
What fabrication methods are used to create the support dielectric pillars in the nanosheet transistors?
While the abstract mentions the presence of support dielectric pillars, it does not detail the specific fabrication techniques or processes involved in incorporating these pillars into the transistor design.
Original Abstract Submitted
one or more systems, devices, and/or methods of fabrication provided herein relate to nanosheet transistors with support dielectric pillars. according to one embodiment, a transistor device can comprise an active transistor fin and a support dielectric pillar located adjacent to the active transistor fin, wherein the support dielectric pillar stabilizes the active transistor fin.
