International business machines corporation (20240178143). BURIED OXIDE LAYER AND ETCH STOP LAYER PROCESS FOR DIRECT BACK SIDE CONTACT OF SEMICONDUCTOR DEVICE simplified abstract

BURIED OXIDE LAYER AND ETCH STOP LAYER PROCESS FOR DIRECT BACK SIDE CONTACT OF SEMICONDUCTOR DEVICE

Organization Name

international business machines corporation

Inventor(s)

Tao Li of Slingerlands NY (US)

Ruilong Xie of Niskayuna NY (US)

Kisik Choi of Watervliet NY (US)

Nicholas Anthony Lanzillo of Wynantskill NY (US)

BURIED OXIDE LAYER AND ETCH STOP LAYER PROCESS FOR DIRECT BACK SIDE CONTACT OF SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240178143 titled 'BURIED OXIDE LAYER AND ETCH STOP LAYER PROCESS FOR DIRECT BACK SIDE CONTACT OF SEMICONDUCTOR DEVICE

Simplified Explanation

The semiconductor chip device described in the abstract includes an electronic components layer supported by a substrate, with active component structures and a power rail positioned on the back side of the electronic components layer. A buried oxide layer is located between the electronic components layer and the power rail, with a back side metal contact buried in the buried oxide layer to bridge one of the active components to the power rail.

• Electronic components layer supported by substrate
• Active component structures within the electronic components layer
• Power rail positioned on back side of electronic components layer
• Buried oxide layer between electronic components layer and power rail
• Back side metal contact buried in buried oxide layer to connect active component to power rail

Potential Applications

The technology described in this patent application could be applied in various semiconductor devices, such as integrated circuits, microprocessors, and memory chips.

Problems Solved

This technology helps in improving the connectivity and power distribution within semiconductor chip devices, enhancing their overall performance and efficiency.

Benefits

The use of a buried oxide layer and back side metal contact allows for more efficient power distribution and connectivity, leading to better functionality and reliability of semiconductor chip devices.

Potential Commercial Applications

This innovative technology could find applications in the manufacturing of advanced electronic devices, leading to improved performance and reliability in various industries such as telecommunications, computing, and consumer electronics.

Possible Prior Art

One possible prior art could be the use of back side metal contacts in semiconductor devices for improved connectivity and power distribution. However, the specific implementation of a buried oxide layer in conjunction with the back side metal contact as described in this patent application may be a novel approach.

How does this technology impact the overall size of semiconductor chip devices?

The abstract does not provide information on whether this technology has any impact on the size of semiconductor chip devices. Further details on the size implications of this innovation would be beneficial for understanding its practical applications.

What materials are typically used for the buried oxide layer and back side metal contact in semiconductor chip devices?

The abstract does not specify the materials used for the buried oxide layer and back side metal contact. Knowing the typical materials used in such components would provide insights into the manufacturing process and potential limitations of this technology.

Original Abstract Submitted

a semiconductor chip device includes an electronic components layer supported by the substrate. the electronic components layer includes a plurality of active component structures. a power rail is positioned on a back side of the electronic components layer. a buried oxide layer is positioned between the electronic components layer and the power rail. a back side metal contact is buried in the buried oxide layer. the back side metal contact bridges one of the active components in the electronic components layer to the power rail.