International business machines corporation (20240178136). LOCAL INTERCONNECT FORMATION AT DOUBLE DIFFUSION BREAK simplified abstract

LOCAL INTERCONNECT FORMATION AT DOUBLE DIFFUSION BREAK

Organization Name

international business machines corporation

Inventor(s)

Ruilong Xie of Niskayuna NY (US)

Min Gyu Sung of Latham NY (US)

Julien Frougier of Albany NY (US)

Chanro Park of Clifton Park NY (US)

Kangguo Cheng of Schenectady NY (US)

LOCAL INTERCONNECT FORMATION AT DOUBLE DIFFUSION BREAK - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240178136 titled 'LOCAL INTERCONNECT FORMATION AT DOUBLE DIFFUSION BREAK

Simplified Explanation

The patent application describes a microelectronic structure with two parallel nano devices, each containing multiple transistors, connected through a doubled diffusion break and backside interconnects.

• The microelectronic structure includes a first nano device with multiple transistors and a second nano device with multiple transistors.
• The first nano device and the second nano device are parallel to each other.
• A doubled diffusion break extends across both the first and second nano devices.
• A back-end-of-the-line (BEOL) layer is located on the frontside of the first and second nano devices.
• A backside interconnect is located on the backside of the first and second nano devices, connected to the BEOL layer through the double diffusion break.

Potential Applications

This technology could be applied in advanced microelectronics, such as in high-performance computing, data storage, and communication systems.

Problems Solved

This innovation solves the challenge of connecting multiple nano devices in a compact and efficient manner, improving overall performance and reliability.

Benefits

The microelectronic structure offers increased integration density, enhanced signal transmission, and improved thermal management, leading to higher efficiency and functionality.

Potential Commercial Applications

Potential commercial applications include semiconductor manufacturing, integrated circuit design, and electronic device production, catering to industries like consumer electronics, automotive, and aerospace.

Possible Prior Art

One possible prior art could be the use of diffusion breaks in microelectronic structures to enhance interconnectivity and performance. However, the specific configuration of parallel nano devices with backside interconnects may be a novel aspect of this patent application.

How does this technology compare to existing methods of connecting nano devices in microelectronic structures?

This article does not provide a direct comparison with existing methods, leaving the reader to speculate on the potential advantages and limitations of this innovation.

What are the specific performance metrics or benchmarks achieved by implementing this microelectronic structure?

The article does not mention any specific performance metrics or benchmarks, making it challenging to assess the practical benefits of this technology in real-world applications.

Original Abstract Submitted

a microelectronic structure including a first nano device that includes a plurality of first transistors and a second nano device that includes a plurality of second transistors. the first nano device and the second nano device are parallel to each other. a doubled diffusion break that extends across the first nano device and the second nano device. a back-end-of-the-line (beol) layer located on a frontside of the first nano device and the second nano device. a backside interconnect located on a backside of the first nano device and the second nano device and the beol layer is connected to the backside interconnect through the double diffusion break.