International business machines corporation (20240178050). ADJACENT BURIED POWER RAIL FOR STACKED FIELD-EFFECT TRANSISTOR ARCHITECTURE simplified abstract

ADJACENT BURIED POWER RAIL FOR STACKED FIELD-EFFECT TRANSISTOR ARCHITECTURE

Organization Name

international business machines corporation

Inventor(s)

Nicholas Anthony Lanzillo of Wynantskill NY (US)

Albert M. Chu of Nashua NY (US)

Ruilong Xie of Niskayuna NY (US)

Biswanath Senapati of Mechanicville NY (US)

Seiji Munetoh of Inagi (JP)

Lawrence A. Clevenger of Saratoga Springs NY (US)

ADJACENT BURIED POWER RAIL FOR STACKED FIELD-EFFECT TRANSISTOR ARCHITECTURE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240178050 titled 'ADJACENT BURIED POWER RAIL FOR STACKED FIELD-EFFECT TRANSISTOR ARCHITECTURE

Simplified Explanation

The abstract describes a patent application related to adjacent buried power rail for stacked field-effect transistor architecture. A semiconductor device comprises a first transistor stacked on a second transistor, with each transistor coupled to a buried power rail.

• The innovation involves a semiconductor device with stacked transistors that are laterally offset from each other.
• The device includes buried power rails that are coupled to each transistor for power distribution.

Potential Applications

The technology could be applied in high-performance computing, mobile devices, and other electronic systems requiring efficient power distribution in stacked transistor architectures.

Problems Solved

This technology solves the problem of efficient power distribution in stacked field-effect transistor architectures, improving overall performance and reliability of semiconductor devices.

Benefits

The benefits of this technology include improved power distribution efficiency, enhanced performance of stacked transistors, and increased reliability of semiconductor devices.

Potential Commercial Applications

The technology could be commercially applied in the semiconductor industry for manufacturing advanced processors, memory devices, and other electronic components requiring stacked transistor architectures.

Possible Prior Art

Prior art in the field of semiconductor devices includes various techniques for power distribution in stacked transistor architectures, but the specific implementation of adjacent buried power rails as described in this patent application may be novel.

How does this technology impact the overall power consumption of semiconductor devices?

This article does not provide specific details on how the technology affects power consumption in semiconductor devices. Further research or experimentation may be needed to determine the exact impact on power efficiency.

What are the potential challenges in implementing this technology on a large scale in semiconductor manufacturing processes?

The article does not address the potential challenges in scaling up the implementation of this technology in semiconductor manufacturing. Factors such as cost, complexity, and compatibility with existing processes could be significant challenges that need to be explored further.

Original Abstract Submitted

one or more systems, devices, and/or methods of fabrication provided herein relate to adjacent buried power rail for stacked field-effect transistor architecture. according to one embodiment, a semiconductor device can comprise a first transistor stacked on a second transistor, wherein the first transistor is offset laterally from the second transistor, and a first buried power rail and a second buried power rail, wherein the first buried power rail is coupled to the first transistor and the second buried power rail is coupled to the second transistor.