International business machines corporation (20240164219). FAST SWITCHING MRAM HAVING AN ALUMINUM-MANGANESE-GERMANIUM FREE LAYER COMBINED WITH A CHROMIUM DIFFUSION BARRIER simplified abstract

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FAST SWITCHING MRAM HAVING AN ALUMINUM-MANGANESE-GERMANIUM FREE LAYER COMBINED WITH A CHROMIUM DIFFUSION BARRIER

Organization Name

international business machines corporation

Inventor(s)

Matthias Georg Gottwald of Ridgefield CT (US)

Alexander Reznicek of Troy NY (US)

FAST SWITCHING MRAM HAVING AN ALUMINUM-MANGANESE-GERMANIUM FREE LAYER COMBINED WITH A CHROMIUM DIFFUSION BARRIER - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240164219 titled 'FAST SWITCHING MRAM HAVING AN ALUMINUM-MANGANESE-GERMANIUM FREE LAYER COMBINED WITH A CHROMIUM DIFFUSION BARRIER

Simplified Explanation

The present invention relates to magnetic tunneling junction (MTJ) pillars with a fast-switching material in the magnetic free layer, a magnetic reference layer, and a tunnel barrier layer. A diffusion barrier layer prevents material diffusion, enabling devices with reduced resistance area.

  • Magnetic tunneling junction (MTJ) pillars with fast-switching material in the magnetic free layer
  • Diffusion barrier layer prevents material diffusion, reducing resistance area
  • Use of AlMnGe alloy for magnetic free layer supports higher magnetic orientation switching speeds

Potential Applications

The technology can be applied in:

  • Magnetic random-access memory (MRAM)
  • Magnetic sensors
  • Spintronic devices

Problems Solved

  • Reduced resistance area in devices
  • Faster magnetic orientation switching speeds

Benefits

  • Improved performance in MRAM and magnetic sensors
  • Enhanced data storage capabilities
  • Increased efficiency in spintronic devices

Potential Commercial Applications

Optimizing MRAM technology for faster and more efficient data storage

Possible Prior Art

Prior art may include research on magnetic tunneling junctions and materials for improving MRAM technology.

Unanswered Questions

How does the AlMnGe alloy compare to other materials for the magnetic free layer in terms of performance and cost?

Answer: Further research and comparative studies are needed to determine the advantages and disadvantages of using AlMnGe alloy compared to other materials for the magnetic free layer.

What are the potential challenges in scaling up the production of devices using this technology for commercial applications?

Answer: The scalability of manufacturing processes and the cost-effectiveness of mass production are important factors to consider when implementing this technology on a larger scale for commercial use.


Original Abstract Submitted

embodiments of the present invention an (or an array of) magnetic tunneling junction (mtj) pillars, each with a magnetic free layer (containing a fast-switching material like aluminum or a metal like gallium), a magnetic reference layer, and a tunnel barrier layer separating the two magnetic layers. a chromium-containing diffusion barrier layer disposed between the magnetic free layer and tunnel barrier layer prevents aluminum (or gallium) diffusion from the magnetic free layer into a tunnel barrier layer of the mtj pillar. devices using and methods of making the fast-switching mtj(s) are also disclosed. the invention enables devices with reduced resistance area (ra). embodiments use a almnge alloy to make the magnetic free layer with a tetragonal crystalline structure and a lower magnetic moment that supports higher magnetic orientation switching speeds.

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