International business machines corporation (20240164089). BACKSIDE PROGRAMMABLE MEMORY simplified abstract

BACKSIDE PROGRAMMABLE MEMORY

Organization Name

international business machines corporation

Inventor(s)

Albert M. Chu of Nashua NH (US)

Junli Wang of Slingerlands NY (US)

Albert M. Young of Fishkill NY (US)

Brent A. Anderson of Jericho VT (US)

Ruilong Xie of Niskayuna NY (US)

Carl Radens of LaGrangeville NY (US)

BACKSIDE PROGRAMMABLE MEMORY - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240164089 titled 'BACKSIDE PROGRAMMABLE MEMORY

Simplified Explanation

The present invention relates to processing methods and resulting structures with backside programmable memory cells. In one embodiment, a structure is formed with programmable cells, each including a backside via in direct contact with a device region. Placeholder and programmed backside vias are defined within the structure, along with a backside metallization layer (bit line) in direct contact with the programmed backside vias.

• Front end of line structure with programmable cells
• Backside vias in direct contact with device region
• Placeholder and programmed backside vias defined
• Back end of line structure (word line) formed on front end structure
• Backside metallization layer (bit line) in direct contact with programmed backside vias

Potential Applications

The technology could be applied in:

• Memory devices
• Embedded systems
• Integrated circuits

Problems Solved

This technology helps in:

• Increasing memory capacity
• Enhancing data storage efficiency

Benefits

The benefits of this technology include:

• Improved memory performance
• Higher data storage density

Potential Commercial Applications

The technology could be commercially benefit:

• Semiconductor industry
• Electronics manufacturing sector

Possible Prior Art

One possible prior art is the use of front-end and back-end structures in memory devices to improve data storage efficiency.

Unanswered Questions

1. How does this technology compare to existing backside programmable memory cell structures? 2. What are the specific manufacturing processes involved in creating these backside programmable memory cells?

Original Abstract Submitted

embodiments of the present invention are directed to processing methods and resulting structures having backside programmable memory cells. in a non-limiting embodiment, a front end of line structure having a plurality of programmable cells is formed such that each programmable cell includes a backside via in direct contact with a device region of the respective cell. a first portion of the backside vias defines one or more placeholder backside vias and a second portion defines one or more programmed backside vias. a back end of line structure (word line) is formed on a first surface of the front end of line structure. a backside structure is formed on a second surface of the front end of line structure opposite the first surface. the backside structure includes a backside metallization layer (bit line) in direct contact with the one or more programmed backside vias.