International business machines corporation (20240162152). AIRGAP SPACER FOR POWER VIA simplified abstract

AIRGAP SPACER FOR POWER VIA

Organization Name

international business machines corporation

Inventor(s)

Ruilong Xie of Niskayuna NY (US)

Lawrence A. Clevenger of Saratoga Springs NY (US)

Nicholas Anthony Lanzillo of Wynantskill NY (US)

Kisik Choi of Watervliet NY (US)

Huai Huang of Clifton Park NY (US)

AIRGAP SPACER FOR POWER VIA - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240162152 titled 'AIRGAP SPACER FOR POWER VIA

Simplified Explanation

The abstract of the patent application describes an airgap spacer for power via in a semiconductor device, which helps maintain parasitic capacitance below a threshold.

• The semiconductor device includes a power bar wired to a backside power rail.
• The power bar is located between the gates of two field effect transistors, with airgaps between the power bar and the gates to reduce parasitic capacitance.
• The airgaps help maintain parasitic capacitance in the semiconductor device below a threshold level.

Potential Applications

This technology could be applied in:

• High-performance computing systems
• Power management circuits
• Integrated circuits for consumer electronics

Problems Solved

• Reduced parasitic capacitance in semiconductor devices
• Improved performance and efficiency of electronic systems

Benefits

• Enhanced reliability of semiconductor devices
• Increased speed and efficiency of electronic systems
• Potential for smaller and more compact electronic devices

Potential Commercial Applications

Optimizing Parasitic Capacitance in Semiconductor Devices for Improved Performance

Possible Prior Art

One possible prior art could be the use of other materials or techniques to reduce parasitic capacitance in semiconductor devices.

Unanswered Questions

How does this technology compare to other methods of reducing parasitic capacitance in semiconductor devices?

This article does not provide a direct comparison with other methods or technologies for reducing parasitic capacitance.

What are the specific threshold levels for parasitic capacitance that this technology aims to maintain?

The abstract does not specify the exact threshold levels for parasitic capacitance that this technology aims to maintain.

Original Abstract Submitted

one or more systems, devices and/or methods of use provided herein relate to an airgap spacer for power via. the semiconductor device can comprise a power bar wired to a backside power rail, wherein the power bar is located between a first gate of a first field effect transistor (fet) and a second gate of a second fet at least a first airgap between the power bar and at least a portion of the first gate of the first fet and a second airgap between the power bar and at least a portion of the second gate of the second fet, wherein the at least the first airgap and the second airgap maintain parasitic capacitance in the semiconductor device below a threshold.