International business machines corporation (20240162151). BURIED POWER RAIL VIA WITH REDUCED ASPECT RATIO DISCREPANCY simplified abstract

BURIED POWER RAIL VIA WITH REDUCED ASPECT RATIO DISCREPANCY

Organization Name

international business machines corporation

Inventor(s)

Alexander Reznicek of Troy NY (US)

Tsung-Sheng Kang of Ballston Lake NY (US)

Koichi Motoyama of Clifton Park NY (US)

Oscar Van Der Straten of Guilderland Center NY (US)

BURIED POWER RAIL VIA WITH REDUCED ASPECT RATIO DISCREPANCY - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240162151 titled 'BURIED POWER RAIL VIA WITH REDUCED ASPECT RATIO DISCREPANCY

Simplified Explanation

The semiconductor device described in the abstract includes a shallow trench isolation region, an inner layer dielectric region, a transistor, and a contact via connecting the transistor to a buried power rail.

• Shallow trench isolation region extends from one end surface to another, providing isolation between components.
• Inner layer dielectric region is in direct contact with the shallow trench isolation region and houses the transistor.
• Contact via electrically connects the transistor to a buried power rail, extending from one end surface to another.

Potential Applications

The technology described in this patent application could be applied in the manufacturing of advanced semiconductor devices, such as integrated circuits, microprocessors, and memory chips.

Problems Solved

This technology solves the problem of efficiently connecting transistors to buried power rails in semiconductor devices while maintaining proper isolation between components.

Benefits

The benefits of this technology include improved performance, reduced power consumption, and increased reliability of semiconductor devices.

Potential Commercial Applications

The potential commercial applications of this technology could be in the semiconductor industry for the production of high-performance electronic devices.

Possible Prior Art

One possible prior art for this technology could be the use of contact vias in semiconductor devices to connect components to power sources. However, the specific arrangement and structure described in this patent application may be novel and inventive.

How does this technology compare to existing methods of connecting transistors to power rails in semiconductor devices?

This technology offers a more efficient and compact solution for connecting transistors to buried power rails, potentially improving overall device performance and reliability.

What are the potential challenges in implementing this technology on a large scale in semiconductor manufacturing processes?

One potential challenge could be ensuring the precise alignment and integration of the contact vias within the inner layer dielectric region, which may require advanced fabrication techniques and quality control measures.

Original Abstract Submitted

a semiconductor device includes a shallow trench isolation region extending from a first end surface to a second end surface. the semiconductor device further includes an inner layer dielectric region extending from a third end surface to a fourth end surface. the inner layer dielectric region is arranged such that the fourth end surface is in direct contact with the first end surface. the semiconductor device further includes a transistor arranged in the inner layer dielectric region and a contact via electrically connecting the transistor to a buried power rail. the contact via extends from the second end surface to the third end surface and is narrower at the fourth end surface than at the first end surface.