International business machines corporation (20240162087). MANDREL-PULL-FIRST INTERCONNECT PATTERNING simplified abstract

From WikiPatents
Jump to navigation Jump to search

MANDREL-PULL-FIRST INTERCONNECT PATTERNING

Organization Name

international business machines corporation

Inventor(s)

Xiaoming Yang of Clifton Park NY (US)

Yann Mignot of Slingerlands NY (US)

SOMNATH Ghosh of CLIFTON PARK NY (US)

Daniel Charles Edelstein of White Plains NY (US)

MANDREL-PULL-FIRST INTERCONNECT PATTERNING - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240162087 titled 'MANDREL-PULL-FIRST INTERCONNECT PATTERNING

Simplified Explanation

The semiconductor structure described in the patent application includes a substrate with a spacer protruding from it, surrounding a cavity, and filled with spin-on glass.

  • The semiconductor structure consists of a substrate, which is the base material for the device.
  • A spacer protrudes from the substrate and surrounds a cavity, creating a specific structure for the semiconductor.
  • The cavity is filled with spin-on glass, which serves a particular purpose within the semiconductor structure.

Potential Applications

The technology described in this patent application could be used in:

  • Semiconductor manufacturing
  • Microelectronics industry
  • Nanotechnology research

Problems Solved

This technology helps solve the following problems:

  • Enhancing semiconductor device performance
  • Improving manufacturing processes
  • Increasing efficiency in microelectronics production

Benefits

The benefits of this technology include:

  • Enhanced semiconductor structure design
  • Improved functionality of semiconductor devices
  • Increased reliability and durability of microelectronics

Potential Commercial Applications

The potential commercial applications of this technology could be in:

  • Semiconductor fabrication companies
  • Electronics manufacturing industry
  • Research institutions focusing on nanotechnology

Possible Prior Art

One possible prior art related to this technology is the use of different materials to fill cavities in semiconductor structures, such as polymers or metals.

Unanswered Questions

How does the spin-on glass filling affect the overall performance of the semiconductor structure?

The article does not delve into the specific impact of the spin-on glass filling on the performance metrics of the semiconductor structure.

What are the specific dimensions and materials used in the spacer surrounding the cavity?

The article does not provide details on the exact dimensions or materials of the spacer used in the semiconductor structure.


Original Abstract Submitted

a semiconductor structure includes a substrate; a spacer protruding from the substrate and surrounding a cavity; and spin-on glass filling a portion of the cavity.