International business machines corporation (20240128346). GATE-ALL-AROUND TRANSISTORS WITH DUAL PFET AND NFET CHANNELS simplified abstract

GATE-ALL-AROUND TRANSISTORS WITH DUAL PFET AND NFET CHANNELS

Organization Name

international business machines corporation

Inventor(s)

Julien Frougier of Albany NY (US)

Andrew M. Greene of Slingerlands NY (US)

Shogo Mochizuki of Mechanicville NY (US)

Ruilong Xie of Niskayuna NY (US)

Liqiao Qin of Albany NY (US)

Gen Tsutsui of Glenmont NY (US)

Nicolas Jean Loubet of GUILDERLAND NY (US)

Min Gyu Sung of Latham NY (US)

Chanro Park of Clifton Park NY (US)

Kangguo Cheng of Schenectady NY (US)

Heng Wu of Santa Clara CA (US)

GATE-ALL-AROUND TRANSISTORS WITH DUAL PFET AND NFET CHANNELS - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240128346 titled 'GATE-ALL-AROUND TRANSISTORS WITH DUAL PFET AND NFET CHANNELS

Simplified Explanation

The semiconductor structure described in the abstract includes a pfet and an nfet, each with functional gate structures and semiconductor channel material nanosheets. The nanosheets can be staggered or vertically aligned, with different dielectric structures in place depending on the alignment.

• The semiconductor structure includes a pfet and an nfet, each with functional gate structures and semiconductor channel material nanosheets.
• The nanosheets can be staggered or vertically aligned in a horizontal direction.
• Staggered nanosheets have a bottom dielectric isolation structure in both device regions, with the nfet gate structure extending beneath the isolation structure.
• Horizontally aligned nanosheets have a vertical dielectric pillar between the device regions.

Potential Applications

The technology described in the patent application could be used in:

• Advanced semiconductor devices
• High-performance computing systems
• Next-generation integrated circuits

Problems Solved

This technology addresses issues such as:

• Improving performance and efficiency of semiconductor devices
• Enhancing the functionality of integrated circuits
• Reducing power consumption in electronic devices

Benefits

The benefits of this technology include:

• Increased speed and performance of semiconductor devices
• Enhanced reliability and longevity of integrated circuits
• Lower power consumption and energy efficiency in electronic systems

Potential Commercial Applications

The potential commercial applications of this technology could be in:

• Semiconductor manufacturing companies
• Electronics industry for consumer electronics
• Telecommunications sector for advanced devices and systems

Possible Prior Art

One possible prior art for this technology could be:

• Previous patents or research on nanosheet semiconductor structures
• Existing technologies for improving performance and efficiency of integrated circuits

Unanswered Questions

How does the alignment of nanosheets impact the overall performance of the semiconductor structure?

The abstract mentions that nanosheets can be staggered or vertically aligned, but it does not provide specific details on how each alignment affects the functionality of the pfet and nfet.

What are the specific materials used for the semiconductor channel material nanosheets in this technology?

The abstract mentions the presence of nanosheets in the pfet and nfet, but it does not specify the exact materials used for these nanosheets.

Original Abstract Submitted

a semiconductor structure is provided that includes a pfet located in a pfet device region, the pfet includes a first functional gate structure and a plurality of pfet semiconductor channel material nanosheets, and an nfet located in the nfet device region, the nfet includes a second functional gate structure and a plurality of pfet semiconductor channel material nanosheets. the pfet semiconductor channel material nanosheets can be staggered relative to, or vertically aligned in a horizontal direction with, the nfet semiconductor channel material nanosheets. when staggered, a bottom dielectric isolation structure can be located in both the device regions, and the second functional gate structures has a bottommost surface that extends beneath a topmost surface of the bottom dielectric isolation structure. when horizontally aligned, a vertical dielectric pillar is located between the two device regions.