SELF-ALIGNED BACKSIDE CONTACT WITH DEEP TRENCH LAST FLOW

Organization Name

international business machines corporation

Inventor(s)

SELF-ALIGNED BACKSIDE CONTACT WITH DEEP TRENCH LAST FLOW - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240096751 titled 'SELF-ALIGNED BACKSIDE CONTACT WITH DEEP TRENCH LAST FLOW

Simplified Explanation

The semiconductor device described in the abstract includes multiple layers and components for improved performance and functionality. Here are the key points explained in bullet points:

The device has first source/drain (s/d) epitaxy and a second s/d epitaxy, along with a gate contact for controlling the flow of current.
It also features a back end of the line (BEOL) layer that is electrically connected to the first s/d epitaxy and the gate contact on the top side of the device.
The device includes a wafer that carries the BEOL layer and is located on the top side of the device.
A backside trench epitaxy is formed through and contacts portions of the second s/d epitaxy, providing additional functionality.
A backside power distribution network is electrically coupled to the backside trench epitaxy and is situated on the bottom of the device.

Potential Applications of this Technology: This semiconductor device with advanced layers and components can be used in various electronic devices such as smartphones, tablets, computers, and other consumer electronics.

Problems Solved by this Technology: This technology helps in improving the performance, efficiency, and functionality of semiconductor devices by incorporating multiple layers and components for enhanced electrical connectivity and control.

Benefits of this Technology: The semiconductor device offers improved electrical connectivity, control, and power distribution, leading to better overall performance and functionality in electronic devices.

Potential Commercial Applications of this Technology: The advanced semiconductor device can be utilized by semiconductor manufacturers, electronics companies, and technology firms for developing next-generation electronic products with enhanced features and performance.

Possible Prior Art: One possible prior art could be the use of multiple epitaxial layers in semiconductor devices for improved performance and functionality. Additionally, the integration of power distribution networks on the backside of the device may also have been explored in previous technologies.

Unanswered Questions: 1. What specific materials are used in the epitaxial layers of this semiconductor device? 2. How does the backside trench epitaxy enhance the overall performance of the device compared to traditional designs?

Original Abstract Submitted

a semiconductor device includes first source/drain (s/d) epitaxy and a second s/d epitaxy and a gate contact. the device also includes a back end of the line (beol) layer connected electrically connected to the first s/d epitaxy and the gate contact on a top side of the device and a wafer that carries the beol layer and is on the top side of the device. the device also includes a backside trench epitaxy formed through and contacting portions of the second s/d epitaxy and a backside power distribution network electrically coupled to the backside trench epitaxy and disposed on the bottom of the device.

International business machines corporation (20240096751). SELF-ALIGNED BACKSIDE CONTACT WITH DEEP TRENCH LAST FLOW simplified abstract

Contents

SELF-ALIGNED BACKSIDE CONTACT WITH DEEP TRENCH LAST FLOW

Organization Name

Inventor(s)