Intel corporation (20250008852). TWO-TERMINAL FERROELECTRIC PEROVSKITE DIODE MEMORY ELEMENT

TWO-TERMINAL FERROELECTRIC PEROVSKITE DIODE MEMORY ELEMENT

Organization Name

intel corporation

Inventor(s)

Punyashloka Debashis of Hillsboro OR (US)

Dominique A. Adams of Portland OR (US)

Gauri Auluck of Hillsboro OR (US)

Scott B. Clendenning of Portland OR (US)

Arnab Sen Gupta of Hillsboro OR (US)

Brandon Holybee of Portland OR (US)

Raseong Kim of Portland OR (US)

Matthew V. Metz of Portland OR (US)

Kevin P. O'brien of Portland OR (US)

John J. Plombon of Portland OR (US)

Marko Radosavljevic of Portland OR (US)

Carly Rogan of North Plains OR (US)

Hojoon Ryu of Hillsboro OR (US)

Rachel A. Steinhardt of Beaverton OR (US)

Tristan A. Tronic of Aloha OR (US)

I-Cheng Tung of Hillsboro OR (US)

Ian Alexander Young of Olympia WA (US)

Dmitri Evgenievich Nikonov of Beaverton OR (US)

TWO-TERMINAL FERROELECTRIC PEROVSKITE DIODE MEMORY ELEMENT

This abstract first appeared for US patent application 20250008852 titled 'TWO-TERMINAL FERROELECTRIC PEROVSKITE DIODE MEMORY ELEMENT

Original Abstract Submitted

a two-terminal ferroelectric perovskite diode comprises a region of ferroelectric perovskite material positioned adjacent to a region of n-type doped perovskite semiconductor material. asserting a positive voltage across the diode can cause the polarization of the ferroelectric perovskite material to be set in a first direction that causes the diode to be placed in a low resistance state due to the formation of an accumulation region in the perovskite semiconductor material at the ferroelectric perovskite-perovskite semiconductor boundary. asserting a negative voltage across the diode can cause the polarization of the ferroelectric perovskite material to be set in a second direction that causes the diode to be placed in a high resistance state due to the formation of a depletion region in the perovskite semiconductor material at the ferroelectric perovskite-perovskite semiconductor material. these non-volatile low and high resistance states enable the diode to be used as a non-volatile memory element.