Intel corporation (20250006653). FIDUCIALS WITH ASSOCIATED LOW-DENSITY METAL ZONES
FIDUCIALS WITH ASSOCIATED LOW-DENSITY METAL ZONES
Organization Name
Inventor(s)
Omkar G. Karhade of Chandler AZ US
Nitin A. Deshpande of Chandler AZ US
Bhaskar Jyoti Krishnatreya of Hillsboro OR US
Francisco Maya of Portland OR US
Alveera Gill of Hillsboro OR US
Keith E. Zawadzki of Portland OR US
FIDUCIALS WITH ASSOCIATED LOW-DENSITY METAL ZONES
This abstract first appeared for US patent application 20250006653 titled 'FIDUCIALS WITH ASSOCIATED LOW-DENSITY METAL ZONES
Original Abstract Submitted
an apparatus comprising an integrated circuit device comprising a fiducial area of a first layer, the fiducial area comprising a metal area and a metal free area; and a plurality of zones that are metal free in multiple layers adjacent to the first layer, wherein the zones are defined by a footprint based on the fiducial area of the first layer and a second fiducial area of a second integrated circuit device, the footprint comprising multiple slits.
- Intel corporation
- Omkar G. Karhade of Chandler AZ US
- Nitin A. Deshpande of Chandler AZ US
- Bhaskar Jyoti Krishnatreya of Hillsboro OR US
- Francisco Maya of Portland OR US
- Siyan Dong of Chandler AZ US
- Alveera Gill of Hillsboro OR US
- Tan Nguyen of Hillsboro OR US
- Keith E. Zawadzki of Portland OR US
- H01L23/544
- H01L23/00
- H01L25/065
- CPC H01L23/544