Intel corporation (20240421101). BACKSIDE CONTACT BASED DIE EDGE GUARD RINGS
Contents
BACKSIDE CONTACT BASED DIE EDGE GUARD RINGS
Organization Name
Inventor(s)
Sunny Chugh of Hillsboro OR (US)
Rahim Kasim of Portland OR (US)
Mohammad Enamul Kabir of Portland OR (US)
Jasmeet S. Chawla of Hillsboro OR (US)
Mauro J. Kobrinsky of Portland OR (US)
Joseph D’silva of Hillsboro OR (US)
BACKSIDE CONTACT BASED DIE EDGE GUARD RINGS
This abstract first appeared for US patent application 20240421101 titled 'BACKSIDE CONTACT BASED DIE EDGE GUARD RINGS
Original Abstract Submitted
guard rings are described. in an example, a semiconductor die includes an active device layer including a plurality of nanoribbon devices. a dielectric structure is over the active device layer. a first die-edge metal guard ring is in the dielectric structure and around an outer perimeter of the plurality of nanoribbon devices. a plurality of metallization layers is in the dielectric structure and within the first die-edge metal guard ring. a plurality of direct backside contacts extend to the active device layer. a plurality of backside metallization structures is beneath the plurality of direct backside contacts. the plurality of direct backside contacts are connected to the plurality of backside metallization structures. a second die-edge metal guard ring is laterally around the plurality of backside metallization structures.
