Intel corporation (20240356552). LOW CONTENTION CURRENT CIRCUITS simplified abstract
Contents
LOW CONTENTION CURRENT CIRCUITS
Organization Name
Inventor(s)
Steven Hsu of Lake Oswego OR (US)
Amit Agarwal of Hillsboro OR (US)
Ram Krishnamurthy of Portland OR (US)
LOW CONTENTION CURRENT CIRCUITS - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240356552 titled 'LOW CONTENTION CURRENT CIRCUITS
The abstract describes a patent application for a circuit that includes a read local bitline and multiple pulldown transistor circuits.
- The first pulldown transistor circuit consists of a first low threshold voltage transistor and a second low threshold voltage transistor.
- The first low threshold voltage transistor is connected to the read local bitline.
- The second low threshold voltage transistor is connected to the first source terminal of the first low threshold voltage transistor.
- The second low threshold voltage transistor maintains a voltage level at its gate terminal, representing a bit of information.
Potential Applications: - This technology could be used in memory storage devices. - It could also be applied in logic circuits for data processing.
Problems Solved: - Provides a more efficient way to store and retrieve information. - Enhances the performance of memory and logic circuits.
Benefits: - Faster data access and processing speeds. - Improved reliability and stability of the circuitry.
Commercial Applications: - Memory chips for computers and mobile devices. - Integrated circuits for various electronic devices.
Questions about the Technology: 1. How does the use of low threshold voltage transistors improve circuit performance? 2. What are the advantages of maintaining a voltage level at the gate terminal of the second low threshold voltage transistor?
Frequently Updated Research: - Stay updated on advancements in semiconductor technology and circuit design to enhance the efficiency of this innovation.
Original Abstract Submitted
a disclosed example includes a read local bitline; and a plurality of pulldown transistor circuits coupled to the read local bitline, a first one of the pulldown transistor circuits including: a first low threshold voltage transistor, the first low threshold voltage transistor including a first drain terminal coupled to the read local bitline; and a second low threshold voltage transistor, the second low threshold voltage transistor including a second drain terminal coupled to a first source terminal of the first low threshold voltage transistor, the second low threshold voltage transistor to persist a voltage level detectable at a gate terminal of the second low threshold voltage transistor, the voltage level representative of a bit of information.
