Intel corporation (20240332290). TRANSISTOR WITH CHANNEL-SYMMETRIC GATE simplified abstract

TRANSISTOR WITH CHANNEL-SYMMETRIC GATE

Organization Name

intel corporation

Inventor(s)

Shao-Ming Koh of Tigard OR (US)

Patrick Morrow of Portland OR (US)

Nikhil Mehta of Portland OR (US)

Leonard Guler of Hillsboro OR (US)

Sudipto Naskar of Portland OR (US)

Alison Davis of Portland OR (US)

Dan Lavric of Portland OR (US)

Matthew Prince of Portland OR (US)

Jeanne Luce of Hillsboro OR (US)

Charles Wallace of Portland OR (US)

Cortnie Vogelsberg of Beaverton OR (US)

Rajaram Pai of Lake Oswego OR (US)

Caitlin Kilroy of Hillsboro OR (US)

Jojo Amonoo of Portland OR (US)

Sean Pursel of Tigard OR (US)

Yulia Gotlib of Portland OR (US)

TRANSISTOR WITH CHANNEL-SYMMETRIC GATE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240332290 titled 'TRANSISTOR WITH CHANNEL-SYMMETRIC GATE

Simplified Explanation: The patent application describes transistor structures with a gate electrode that is self-aligned to the underlying channel material. A cap of mask material is used to protect a portion of the gate material during a gate etch process, ensuring symmetrical extension of the gate material beyond the channel material.

• The invention involves transistor structures with self-aligned gate electrodes.
• A cap of mask material is used to protect the gate material during a gate etch process.
• The cap ensures symmetrical extension of the gate material beyond the channel material.
• The technology helps in precise alignment and protection of the gate material during fabrication.
• This innovation enhances the performance and reliability of transistors in electronic devices.

Potential Applications: 1. Semiconductor manufacturing industry for producing high-performance transistors. 2. Electronics industry for improving the efficiency of integrated circuits. 3. Research and development for advancing semiconductor technology.

Problems Solved: 1. Ensures precise alignment of gate electrodes to the channel material. 2. Protects gate material during fabrication processes. 3. Enhances the symmetry and performance of transistors in electronic devices.

Benefits: 1. Improved transistor performance and reliability. 2. Enhanced efficiency of integrated circuits. 3. Simplified manufacturing processes for semiconductor devices.

Commercial Applications: Title: Advanced Transistor Structures for High-Performance Electronics This technology can be utilized in the production of high-performance electronic devices such as smartphones, computers, and other consumer electronics. It can also benefit industries involved in semiconductor manufacturing and research.

Prior Art: Readers can explore prior patents related to self-aligned gate electrodes in semiconductor devices to understand the evolution of this technology.

Frequently Updated Research: Researchers are constantly working on improving transistor structures for better performance and efficiency in electronic devices.

Questions about Transistor Structures with Self-Aligned Gates: 1. How does the self-aligned gate electrode technology improve transistor performance? 2. What are the key advantages of using a cap of mask material in protecting gate material during fabrication processes?

Original Abstract Submitted

transistor structures comprising a gate electrode, or “gate,” that is self-aligned to underlying channel material. a mask material employed for patterning the channel material is further employed to define a cap of mask material having a larger width that protects a portion of gate material during a gate etch. the cap is therefore self-aligned to the channel material so that an amount by which a gate material extends laterally beyond the channel material is ensured to be symmetrical about a centerline of the channel material.