Intel corporation (20240321962). ROUNDED NANORIBBONS WITH REGROWN CAPS simplified abstract
Contents
ROUNDED NANORIBBONS WITH REGROWN CAPS
Organization Name
Inventor(s)
Robin Chao of Portland OR (US)
Feng Zhang of Hillsboro OR (US)
Minwoo Jang of Portland OR (US)
ROUNDED NANORIBBONS WITH REGROWN CAPS - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240321962 titled 'ROUNDED NANORIBBONS WITH REGROWN CAPS
The patent application describes nanoribbon-based transistor devices with rounded cross-sections, including nanoribbons with outer layers of semiconductor channel material grown over inner layers.
- Nanoribbons have rounded cross-sections.
- Nanoribbons may have caps or outer layers of semiconductor channel material.
- Different materials can be used for the outer layers of nMOS and pMOS transistors.
- Example: Integrated circuit device with nMOS transistors made from nanoribbons with rounded cross-sections and outer layer of silicon, and pMOS transistors made from nanoribbons with rounded cross-sections and outer layer of silicon germanium.
- Potential Applications**
This technology can be used in the development of advanced integrated circuits, improving performance and efficiency.
- Problems Solved**
The technology addresses the need for more efficient and high-performance transistor devices in semiconductor technology.
- Benefits**
The rounded cross-section nanoribbons offer enhanced performance and efficiency in transistor devices, leading to improved overall circuit performance.
- Commercial Applications**
This technology has potential commercial applications in the semiconductor industry for the development of high-performance electronic devices.
- Prior Art**
Researchers can explore prior art related to nanoribbon-based transistor devices and semiconductor technology to understand the evolution of this innovation.
- Frequently Updated Research**
Researchers can stay updated on advancements in nanoribbon-based transistor devices and semiconductor technology to leverage the latest developments in their work.
- Questions about Nanoribbon-Based Transistor Devices**
1. How do rounded cross-section nanoribbons improve transistor device performance?
- Rounded cross-section nanoribbons offer improved electron transport properties, enhancing transistor performance.
2. What are the advantages of using different materials for the outer layers of nMOS and pMOS transistors?
- Using different materials allows for optimized performance of nMOS and pMOS transistors, enhancing overall circuit efficiency.
Original Abstract Submitted
described herein are nanoribbon-based transistor devices in which the nanoribbons have rounded cross-sections. the nanoribbons may include caps or outer layers of semiconductor channel material grown over an inner layer of semiconductor channel material. different materials may be used for the outer layers of nmos and pmos transistors. in one example, an integrated circuit device includes nmos transistors formed from or more nanoribbons with rounded cross-sections and an outer layer of silicon, and a pmos transistors formed from or more nanoribbons with rounded cross-sections and an outer layer of silicon germanium.
