Intel corporation (20240321872). GATE LINK ACROSS GATE CUT IN SEMICONDUCTOR DEVICES simplified abstract

GATE LINK ACROSS GATE CUT IN SEMICONDUCTOR DEVICES

Organization Name

intel corporation

Inventor(s)

Leonard P. Guler of Hillsboro OR (US)

Shengsi Liu of Portland OR (US)

Saurabh Acharya of Hillsboro OR (US)

Thomas Obrien of Portland OR (US)

Krishna Ganesan of Portland OR (US)

Ankit Kirit Lakhani of Hillsboro OR (US)

Prabhjot Kaur Luthra of Portland OR (US)

Nidhi Khandelwal of Portland OR (US)

Clifford J. Engel of Hillsboro OR (US)

Baofu Zhu of Portland OR (US)

Meenakshisundaram Ramanathan of Hillsboro OR (US)

GATE LINK ACROSS GATE CUT IN SEMICONDUCTOR DEVICES - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240321872 titled 'GATE LINK ACROSS GATE CUT IN SEMICONDUCTOR DEVICES

Simplified Explanation: The patent application discusses techniques for forming an integrated circuit with a gate cut between adjacent pairs of semiconductor devices, where a conductive link (such as a bridge) connects the adjacent gates together.

Key Features and Innovation:

• Formation of an integrated circuit with a gate cut between adjacent semiconductor devices.
• Inclusion of a conductive link to connect the adjacent gates together.
• Isolation of the gates of neighboring semiconductor devices through gate cuts.
• Dielectric layer extending over the bridged gate electrodes and the conductive link.

Potential Applications: This technology can be applied in the semiconductor industry for the manufacturing of integrated circuits with improved connectivity between adjacent semiconductor devices.

Problems Solved:

• Enhanced connectivity between neighboring semiconductor devices.
• Improved isolation of gates in integrated circuits.
• Facilitation of efficient electronic communication within the circuit.

Benefits:

• Enhanced performance and reliability of integrated circuits.
• Simplified manufacturing processes for semiconductor devices.
• Increased efficiency in electronic communication within the circuit.

Commercial Applications: Potential commercial applications include the production of advanced electronic devices, such as smartphones, computers, and other consumer electronics, that require high-performance integrated circuits.

Prior Art: Readers can explore prior patents related to integrated circuits, semiconductor device manufacturing, and gate structure design to gain a deeper understanding of the technology discussed in this patent application.

Frequently Updated Research: Researchers in the field of semiconductor technology may be conducting studies on improving the connectivity and efficiency of integrated circuits, which could be relevant to this technology.

Questions about Integrated Circuits with Gate Cuts: 1. How does the inclusion of a conductive link between adjacent gates improve the performance of integrated circuits? 2. What are the potential challenges in implementing gate cuts between semiconductor devices in integrated circuits?

Original Abstract Submitted

techniques to form an integrated circuit having a gate cut between adjacent pairs of semiconductor devices. at least one of those adjacent pairs of semiconductor devices includes a conductive link (e.g., a bridge) through the gate cut to connect the adjacent gates together. in an example, neighboring semiconductor devices each include a semiconductor region extending between a source region and a drain region, and a gate structure extending over the semiconductor regions of the neighboring semiconductor devices. a gate cut is present between each pair of neighboring semiconductor devices thus interrupting the gate structure and isolating the gate of one semiconductor device from the gate of the other semiconductor device. a conductive link extends over a given gate cut to electrically connect the adjacent gate electrodes together. a dielectric layer extends over the bridged gate electrodes and the conductive link, and may have different thicknesses over those respective features.