Intel corporation (20240321859). INTEGRATED CIRCUIT DEVICE WITH PERFORMANCE-ENHANCING LAYOUT simplified abstract

INTEGRATED CIRCUIT DEVICE WITH PERFORMANCE-ENHANCING LAYOUT

Organization Name

intel corporation

Inventor(s)

Tao Chu of Portland OR (US)

Minwoo Jang of Portland OR (US)

Yanbin Luo of Portland OR (US)

Paul Packan of Hillsboro OR (US)

Guowei Xu of Portland OR (US)

Chiao-Ti Huang of Portland OR (US)

Robin Chao of Portland OR (US)

Feng Zhang of Hillsboro OR (US)

Anand S. Murthy of Portland OR (US)

Tahir Ghani of Portland OR (US)

INTEGRATED CIRCUIT DEVICE WITH PERFORMANCE-ENHANCING LAYOUT - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240321859 titled 'INTEGRATED CIRCUIT DEVICE WITH PERFORMANCE-ENHANCING LAYOUT

• • Simplified Explanation:**

The patent application describes an integrated circuit (IC) device with an array of transistors featuring separate gate electrodes made of polysilicon. These gate electrodes are insulated from each other, with shorter lengths for separated gate electrodes compared to connected ones, optimizing performance due to local layout effects. Additionally, the IC device includes conductive structures crossing support structures of multiple transistors, causing strain that enhances the local layout effect. Dielectric structures formed by removing gate electrodes in some transistors and filling the openings with dielectric material further boost the local layout effect.

• • Key Features and Innovation:**
• Array of transistors with separate gate electrodes made of polysilicon
• Insulated gate electrodes with shorter lengths for optimized performance
• Conductive structures causing strain to enhance local layout effect
• Dielectric structures formed by removing gate electrodes in some transistors
• Filling openings with dielectric material to boost local layout effect

• • Potential Applications:**

This technology can be applied in the semiconductor industry for the development of advanced IC devices with improved performance and efficiency.

• • Problems Solved:**
• Optimization of IC device performance through local layout effects
• Enhancement of strain in the device for better functionality
• Improvement of overall efficiency and effectiveness in semiconductor applications

• • Benefits:**
• Enhanced performance and efficiency in IC devices
• Improved local layout effects for better functionality
• Potential for advancements in semiconductor technology

• • Commercial Applications:**

Potential commercial applications include the production of high-performance IC devices for various electronic products, leading to increased efficiency and functionality in semiconductor applications.

• • Prior Art:**

Prior art related to this technology may include research on optimizing transistor performance through gate electrode design and layout effects in IC devices.

• • Frequently Updated Research:**

Researchers may be exploring further enhancements in local layout effects and strain optimization in IC devices to push the boundaries of semiconductor technology.

• • Questions about IC Device Optimization:**

1. How does the presence of dielectric structures impact the local layout effect in IC devices? 2. What are the potential challenges in implementing separated gate electrodes with shorter lengths for optimized performance?

Original Abstract Submitted

an ic device may include an array of transistors. the transistors may have separate gate electrodes. a gate electrode may include polysilicon. the gate electrodes may be separated from each other by one or more electrical insulators. the separated gate electrodes have shorter lengths, compared with connected gate electrodes, which can optimize the performance of the ic device due to local layout effect. also, the ic device may include conductive structures crossing the support structures of multiple transistors. such conductive structures may cause strain in the ic device, which can boost the local layout effect. the conductive structures may be insulated from a power plane. alternatively or additionally, the ic device may include dielectric structures, which may be formed by removing gate electrodes in some of the transistors and providing a dielectric material into the openings. the presence of the dielectric structures can further boost the local layout effect.