Intel corporation (20240321737). ISOLATED BACKSIDE CONTACTS FOR SEMICONDUCTOR DEVICES simplified abstract

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ISOLATED BACKSIDE CONTACTS FOR SEMICONDUCTOR DEVICES

Organization Name

intel corporation

Inventor(s)

Leonard P. Guler of Hillsboro OR (US)

Charles H. Wallace of Portland OR (US)

Shengsi Liu of Portland OR (US)

Saurabh Acharya of Hillsboro OR (US)

ISOLATED BACKSIDE CONTACTS FOR SEMICONDUCTOR DEVICES - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240321737 titled 'ISOLATED BACKSIDE CONTACTS FOR SEMICONDUCTOR DEVICES

The abstract describes techniques for forming semiconductor devices with source or drain regions that have backside contacts separated by dielectric walls.

  • First semiconductor device includes a first semiconductor region, such as nanoribbons, extending from a first source or drain region.
  • Second semiconductor device includes a second semiconductor region, such as nanoribbons, extending from a second source or drain region adjacent to the first region.
  • First conductive contact abuts the underside of the first source or drain region, and a second conductive contact abuts the underside of the second region.
  • Dielectric wall extends between the first and second contacts, separating them, and also between the first and second source or drain regions.

Potential Applications: - Advanced semiconductor devices - Nanotechnology - Electronics industry

Problems Solved: - Efficient separation of backside contacts - Enhanced performance of semiconductor devices

Benefits: - Improved device functionality - Increased efficiency in device fabrication - Enhanced reliability

Commercial Applications: Title: "Innovative Semiconductor Devices with Separated Backside Contacts" This technology can be applied in the development of high-performance electronic devices, leading to advancements in various industries such as telecommunications, computing, and consumer electronics.

Questions about the technology: 1. How does the use of dielectric walls improve the performance of semiconductor devices? 2. What are the potential challenges in implementing this technology in mass production?


Original Abstract Submitted

techniques are provided herein to form semiconductor devices having one or more source or drain regions with backside contacts that are separated using dielectric walls. in an example, a first semiconductor device includes a first semiconductor region, such as one or more first nanoribbons, extending from a first source or drain region, and a second semiconductor device including a second semiconductor region, such as one or more second nanoribbons, extending from a second source or drain region adjacent to the first source or drain region. a first conductive contact abuts the underside of the first source or drain region and a second conductive contact abuts the underside of the second source or drain region. a dielectric wall extends between the first and second contacts, thus separating them from contacting each other. the dielectric wall also extends between the first source or drain region and the second source or drain region.

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