Intel corporation (20240282624). CONFORMAL LOW TEMPERATURE HERMETIC DIELECTRIC DIFFUSION BARRIERS simplified abstract
Contents
CONFORMAL LOW TEMPERATURE HERMETIC DIELECTRIC DIFFUSION BARRIERS
Organization Name
Inventor(s)
Sean King of Beaverton OR (US)
Hui Jae Yoo of Portland OR (US)
Sreenivas Kosaraju of Portland OR (US)
Timothy Glassman of Portland OR (US)
CONFORMAL LOW TEMPERATURE HERMETIC DIELECTRIC DIFFUSION BARRIERS - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240282624 titled 'CONFORMAL LOW TEMPERATURE HERMETIC DIELECTRIC DIFFUSION BARRIERS
Simplified Explanation: The patent application discusses the development of conformal hermetic dielectric films that can act as effective diffusion barriers over 3D topography. These films are created using advanced deposition techniques to achieve superior conformality and density compared to traditional silicon dioxide-based films.
- These dielectric diffusion barriers are made up of a dielectric layer, such as a metal oxide, deposited using atomic layer deposition (ALD) for enhanced performance.
- Multi-layered films are utilized, combining high-k and low-k dielectric layers to reduce the dielectric constant of the barrier.
- The incorporation of a silicate of a high-k dielectric layer helps adjust the k-value of the barrier while maintaining high film conformality and density.
Key Features and Innovation:
- Use of advanced deposition techniques like ALD for superior film quality.
- Multi-layered film structure to optimize dielectric constant.
- Incorporation of metal silicates to fine-tune barrier properties.
Potential Applications: The technology can be applied in semiconductor manufacturing, MEMS devices, and other microelectronics industries where precise diffusion barriers are required.
Problems Solved:
- Improving diffusion barrier performance over complex topographies.
- Reducing dielectric constant for enhanced device efficiency.
Benefits:
- Enhanced film quality and performance.
- Improved reliability of microelectronic devices.
- Potential for increased device efficiency.
Commercial Applications: The technology can be utilized in the semiconductor industry for the production of advanced electronic devices, leading to improved performance and reliability in various applications.
Questions about Conformal Hermetic Dielectric Films: 1. What are the key advantages of using conformal hermetic dielectric films over traditional silicon dioxide-based films? 2. How does the multi-layered structure of these diffusion barriers contribute to reducing the dielectric constant effectively?
Original Abstract Submitted
conformal hermetic dielectric films suitable as dielectric diffusion barriers over 3d topography. in embodiments, the dielectric diffusion barrier includes a dielectric layer, such as a metal oxide, which can be deposited by atomic layer deposition (ald) techniques with a conformality and density greater than can be achieved in a conventional silicon dioxide-based film deposited by a pecvd process for a thinner contiguous hermetic diffusion barrier. in further embodiments, the diffusion barrier is a multi-layered film including a high-k dielectric layer and a low-k or intermediate-k dielectric layer (e.g., a bi-layer) to reduce the dielectric constant of the diffusion barrier. in other embodiments a silicate of a high-k dielectric layer (e.g., a metal silicate) is formed to lower the k-value of the diffusion barrier by adjusting the silicon content of the silicate while maintaining high film conformality and density.
