Intel corporation (20240266323). STACKED SEMICONDUCTOR DIE ARCHITECTURE WITH MULTIPLE LAYERS OF DISAGGREGATION simplified abstract

From WikiPatents
Jump to navigation Jump to search

STACKED SEMICONDUCTOR DIE ARCHITECTURE WITH MULTIPLE LAYERS OF DISAGGREGATION

Organization Name

intel corporation

Inventor(s)

Edward Burton of Hillsboro OR (US)

STACKED SEMICONDUCTOR DIE ARCHITECTURE WITH MULTIPLE LAYERS OF DISAGGREGATION - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240266323 titled 'STACKED SEMICONDUCTOR DIE ARCHITECTURE WITH MULTIPLE LAYERS OF DISAGGREGATION

Simplified Explanation: The patent application describes stacked semiconductor die architectures with one or more base dies and techniques for forming such architectures, which can be used in semiconductor packages.

  • Stacked semiconductor die architectures include one or more base dies and a carrier wafer with multiple stacked semiconductor dies embedded in it.
  • Interconnect structures like wires, bumps, and microbumps couple the base dies to the carrier wafer and/or the stacked semiconductor dies.

Key Features and Innovation:

  • Stacked semiconductor die architectures with base dies and carrier wafers.
  • Interconnect structures connecting base dies to the carrier wafer and stacked semiconductor dies.

Potential Applications:

  • Semiconductor packaging
  • Integrated circuits
  • Microelectronics

Problems Solved:

  • Enhancing semiconductor package density
  • Improving interconnectivity between dies

Benefits:

  • Increased functionality in a smaller footprint
  • Enhanced performance through improved interconnects

Commercial Applications: Potential commercial applications include:

  • Mobile devices
  • Computer systems
  • Automotive electronics

Prior Art: Prior art related to stacked semiconductor die architectures and interconnect structures in semiconductor packaging.

Frequently Updated Research: Research on advancements in semiconductor packaging technologies and interconnect structures.

Questions about Stacked Semiconductor Die Architectures: 1. How do stacked semiconductor die architectures improve the performance of semiconductor packages? 2. What are the key challenges in implementing interconnect structures in stacked semiconductor die architectures?


Original Abstract Submitted

stacked semiconductor die architectures having one or more base dies and techniques of forming such architectures are described. the stacked semiconductor die architectures may be included in or used to form semiconductor packages. a stacked semiconductor die architecture can include: (i) one or more base dies (e.g., at least one disaggregated base die, at least one monolithic base die, etc.); and (ii) a carrier wafer having multiple stacked semiconductor dies embedded in the carrier wafer, where the carrier wafer is on the one or more base dies and where one or more interconnect structures (e.g., wires, bumps, microbumps, pillars, etc.) couple the one or more base dies to the carrier wafer and/or the stacked semiconductor dies.

Retrieved from "http://wikipatents.org/index.php?title=Intel_corporation_(20240266323)._STACKED_SEMICONDUCTOR_DIE_ARCHITECTURE_WITH_MULTIPLE_LAYERS_OF_DISAGGREGATION_simplified_abstract&oldid=212484"