Intel corporation (20240241446). METHODS AND APPARATUS TO REDUCE EXTREME ULTRAVIOLET LIGHT FOR PHOTOLITHOGRAPHY simplified abstract

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METHODS AND APPARATUS TO REDUCE EXTREME ULTRAVIOLET LIGHT FOR PHOTOLITHOGRAPHY

Organization Name

intel corporation

Inventor(s)

Marvin Paik of Portland OR (US)

Charles H. Wallace of Portland OR (US)

Leonard Guler of Hillsboro OR (US)

Elliot N. Tan of Portland OR (US)

Shengsi Liu of Portland OR (US)

Vivek Vishwakarma of Brush Priarie WA (US)

Izabela Samek of Hillsboro OR (US)

Mohammadreza Soleymaniha of Cedar Park TX (US)

METHODS AND APPARATUS TO REDUCE EXTREME ULTRAVIOLET LIGHT FOR PHOTOLITHOGRAPHY - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240241446 titled 'METHODS AND APPARATUS TO REDUCE EXTREME ULTRAVIOLET LIGHT FOR PHOTOLITHOGRAPHY

Simplified Explanation: The patent application describes a lithography apparatus that uses both ultraviolet (UV) and extreme ultraviolet (EUV) light sources to expose a photoresist layer and create patterns for semiconductor manufacturing.

  • UV source exposes photoresist layer to UV light
  • EUV source coupled to UV source exposes photoresist layer to EUV light via a photomask
  • Combination of UV and EUV light creates patterns on the photoresist layer
  • Developer solution applied to photoresist layer to develop the pattern

Key Features and Innovation: - Utilization of both UV and EUV light sources for lithography - Enhanced precision and resolution in creating patterns on photoresist layer - Improved efficiency in semiconductor manufacturing processes

Potential Applications: - Semiconductor manufacturing - Microelectronics industry - Nanotechnology research

Problems Solved: - Achieving higher resolution and precision in lithography - Enhancing the efficiency of semiconductor manufacturing processes - Improving the quality of microelectronic devices

Benefits: - Increased accuracy in pattern creation - Enhanced efficiency in semiconductor manufacturing - Improved quality and performance of microelectronic devices

Commercial Applications: Title: Advanced Lithography Apparatus for Semiconductor Manufacturing Description: This technology can be used in semiconductor fabrication facilities to improve the quality and efficiency of manufacturing processes, potentially leading to the development of higher-performing microelectronic devices.

Prior Art: Researchers and engineers in the field of lithography technology have been exploring the use of multiple light sources to enhance the precision and resolution of pattern creation on photoresist layers. Various patents and research papers may exist on similar concepts.

Frequently Updated Research: Ongoing research in the field of lithography technology focuses on further improving the resolution and efficiency of pattern creation using advanced light sources and materials.

Questions about Lithography Apparatus: 1. How does the combination of UV and EUV light sources improve the quality of pattern creation in lithography? 2. What are the potential challenges in integrating UV and EUV light sources in semiconductor manufacturing processes?


Original Abstract Submitted

apparatus and methods are disclosed. an example lithography apparatus includes an ultraviolet (uv) source to expose a photoresist layer to uv light; and an extreme ultraviolet (euv) source coupled to the uv source, the euv source to expose the photoresist layer to euv light to via a photomask, a combination of the uv light and the euv light provide a pattern on the photoresist layer when a developer solution is applied to the photoresist layer.