Intel corporation (20240222520). INTEGRATED CIRCUIT STRUCTURES HAVING VERTICAL SHARED GATE HIGH-DRIVE THIN FILM TRANSISTORS simplified abstract

INTEGRATED CIRCUIT STRUCTURES HAVING VERTICAL SHARED GATE HIGH-DRIVE THIN FILM TRANSISTORS

Organization Name

intel corporation

Inventor(s)

Abhishek Anil Sharma of Portland OR (US)

Sagar Suthram of Portland OR (US)

Wilfred Gomes of Portland OR (US)

Tahir Ghani of Portland OR (US)

Anand S. Murthy of Portland OR (US)

Pushkar Ranade of San Jose CA (US)

INTEGRATED CIRCUIT STRUCTURES HAVING VERTICAL SHARED GATE HIGH-DRIVE THIN FILM TRANSISTORS - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240222520 titled 'INTEGRATED CIRCUIT STRUCTURES HAVING VERTICAL SHARED GATE HIGH-DRIVE THIN FILM TRANSISTORS

• • Simplified Explanation:**

The patent application describes structures with vertical shared gate high-drive thin film transistors in an integrated circuit. It includes a stack of dielectric and metal layers with a trench, a semiconductor channel layer, a gate dielectric layer, and a gate electrode.

• • Key Features and Innovation:**

- Vertical shared gate high-drive thin film transistors - Integrated circuit structure with alternating dielectric and metal layers - Trench through the stack for the semiconductor channel layer - Gate dielectric layer along the sides of the semiconductor channel layer - Gate electrode within the sides of the gate dielectric layer

• • Potential Applications:**

- Advanced semiconductor devices - High-performance integrated circuits - Display technologies - Sensor applications

• • Problems Solved:**

- Improved transistor performance - Enhanced integration density - Increased efficiency in circuit design

• • Benefits:**

- Higher drive capabilities - Better control over transistor operation - Increased functionality in electronic devices

• • Commercial Applications:**

Title: Vertical Shared Gate High-Drive Thin Film Transistors for Advanced Integrated Circuits This technology can be utilized in the development of high-performance electronic devices, such as smartphones, tablets, and smartwatches. It can also find applications in the automotive industry for advanced driver assistance systems and in the healthcare sector for medical imaging devices.

• • Prior Art:**

Prior art related to this technology may include research on vertical thin film transistors, semiconductor device fabrication techniques, and integrated circuit design methodologies.

• • Frequently Updated Research:**

Researchers are continuously exploring ways to enhance the performance and efficiency of thin film transistors in integrated circuits. Stay updated on the latest advancements in semiconductor technology to leverage the full potential of this innovation.

• • Questions about Vertical Shared Gate High-Drive Thin Film Transistors:**

1. How do vertical shared gate high-drive thin film transistors differ from traditional thin film transistors? 2. What are the key advantages of using vertical shared gate high-drive thin film transistors in integrated circuits?

Original Abstract Submitted

structures having vertical shared gate high-drive thin film transistors are described. in an example, an integrated circuit structure includes a stack of alternating dielectric layers and metal layers. a trench is through the stack of alternating dielectric layers and metal layers. a semiconductor channel layer is along sides of the trench. a gate dielectric layer is along sides the semiconductor channel layer in the trench. a gate electrode is within sides of the gate dielectric layer.