Intel corporation (20240222514). ETCH STOP FOR OXIDE SEMICONDUCTOR DEVICES simplified abstract
Contents
ETCH STOP FOR OXIDE SEMICONDUCTOR DEVICES
Organization Name
Inventor(s)
Christopher Connor of Portland OR (US)
Vishak Venkatraman of Portland OR (US)
Vladimir Nikitin of Portland OR (US)
Yasin Kaya of Hillsboro OR (US)
ETCH STOP FOR OXIDE SEMICONDUCTOR DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240222514 titled 'ETCH STOP FOR OXIDE SEMICONDUCTOR DEVICES
The abstract describes an integrated circuit structure with a first layer made of a semiconductor material, such as an oxide semiconductor material, and a second layer above it made of a metal and oxygen or nitrogen, serving as an etch stop layer.
- The first layer comprises an oxide semiconductor material.
- The second layer includes a metal and oxygen or nitrogen, with a thickness of at most 20 nanometers.
- The structure includes source/drain terminals extending through the second layer and coupled to the first layer.
- The integrated circuit structure is a thin film transistor (TFT), with the first layer acting as a thin film channel structure.
Potential Applications: - Thin film transistors in display technologies - Semiconductor devices in electronic circuits
Problems Solved: - Improved performance and reliability of integrated circuits - Enhanced functionality of thin film transistors
Benefits: - Higher efficiency and speed in electronic devices - Reduced power consumption and heat generation
Commercial Applications: Title: "Advanced Thin Film Transistors for High-Performance Displays" This technology can be used in manufacturing high-resolution displays for smartphones, tablets, and televisions, improving image quality and overall performance in consumer electronics markets.
Questions about the technology: 1. How does the integration of oxide semiconductor materials improve the performance of thin film transistors? 2. What are the specific advantages of using an etch stop layer in the integrated circuit structure?
Original Abstract Submitted
an integrated circuit structure includes a first layer comprising a semiconductor material. in an example, the semiconductor material of the layer comprises an oxide semiconductor material (e.g., comprising a metal and oxygen). the integrated circuit structure further includes a second layer above the first layer, where the second layer includes a metal and one of oxygen or nitrogen (e.g., includes aluminum and oxygen). in an example, the second layer is an etch stop layer. in an example, the second layer has a thickness of at most 20 nanometers. the integrated circuit structure further includes a first source or drain terminal and a second source or drain terminal, where each of the first and second source or drain terminals extends through the second layer and is coupled to the first layer. in an example, the integrated circuit structure is a thin film transistor (tft), where the first layer is a thin film channel structure of the tft.
