Intel corporation (20240222509). SEMICONDUCTOR DEVICE HAVING A NECKED SEMICONDUCTOR BODY AND METHOD OF FORMING SEMICONDUCTOR BODIES OF VARYING WIDTH simplified abstract
SEMICONDUCTOR DEVICE HAVING A NECKED SEMICONDUCTOR BODY AND METHOD OF FORMING SEMICONDUCTOR BODIES OF VARYING WIDTH
Organization Name
Inventor(s)
Bernhard Sell of Portland OR (US)
SEMICONDUCTOR DEVICE HAVING A NECKED SEMICONDUCTOR BODY AND METHOD OF FORMING SEMICONDUCTOR BODIES OF VARYING WIDTH - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240222509 titled 'SEMICONDUCTOR DEVICE HAVING A NECKED SEMICONDUCTOR BODY AND METHOD OF FORMING SEMICONDUCTOR BODIES OF VARYING WIDTH
Simplified Explanation: The patent application describes semiconductor devices with necked semiconductor bodies and methods of forming semiconductor bodies of varying width. A semiconductor device includes a semiconductor body above a substrate, with a gate electrode stack defining a channel region in the semiconductor body. Source and drain regions are on either side of the gate electrode stack, with sidewall spacers over a portion of the source and drain regions.
- The semiconductor device has a semiconductor body with varying width.
- Gate electrode stack defines a channel region in the semiconductor body.
- Source and drain regions are located on either side of the gate electrode stack.
- Sidewall spacers are disposed over a portion of the source and drain regions.
- The portion of the source and drain regions under the sidewall spacers has a greater height and width than the channel region.
Potential Applications: This technology can be applied in the development of advanced semiconductor devices for various electronic applications, including integrated circuits, microprocessors, and memory devices.
Problems Solved: This technology addresses the need for improved performance and efficiency in semiconductor devices by optimizing the width and height of the source and drain regions.
Benefits: The benefits of this technology include enhanced device performance, increased efficiency, and improved overall functionality of semiconductor devices.
Commercial Applications: The technology can be utilized in the semiconductor industry to create more advanced and efficient electronic devices, leading to potential market growth and innovation in various electronic applications.
Prior Art: Prior art related to this technology can be found in research papers and patents focusing on semiconductor device design and fabrication processes.
Frequently Updated Research: Researchers are constantly exploring new methods and materials to further enhance the performance and efficiency of semiconductor devices, which may impact the development of this technology.
Questions about Semiconductor Devices with Necked Semiconductor Bodies: 1. What are the key advantages of using necked semiconductor bodies in semiconductor devices? 2. How does the width variation in the semiconductor bodies affect the overall performance of the devices?
Original Abstract Submitted
semiconductor devices having necked semiconductor bodies and methods of forming semiconductor bodies of varying width are described. for example, a semiconductor device includes a semiconductor body disposed above a substrate. a gate electrode stack is disposed over a portion of the semiconductor body to define a channel region in the semiconductor body under the gate electrode stack. source and drain regions are defined in the semiconductor body on either side of the gate electrode stack. sidewall spacers are disposed adjacent to the gate electrode stack and over only a portion of the source and drain regions. the portion of the source and drain regions under the sidewall spacers has a height and a width greater than a height and a width of the channel region of the semiconductor body.
