Intel corporation (20240222506). FIELD EFFECT TRANSISTOR COMPRISING TRANSITION METAL DICHALCOGENIDE (TMD) AND FERROELECTRIC MATERIAL simplified abstract

FIELD EFFECT TRANSISTOR COMPRISING TRANSITION METAL DICHALCOGENIDE (TMD) AND FERROELECTRIC MATERIAL

Organization Name

intel corporation

Inventor(s)

Hojoon Ryu of Urbana IL (US)

Punyashloka Debashis of Hillsboro OR (US)

Rachel A. Steinhardt of Beaverton OR (US)

Kevin P. O'brien of Portland OR (US)

John J. Plombon of Portland OR (US)

Dmitri Evgenievich Nikonov of Beaverton OR (US)

Ian Alexander Young of Olympia WA (US)

FIELD EFFECT TRANSISTOR COMPRISING TRANSITION METAL DICHALCOGENIDE (TMD) AND FERROELECTRIC MATERIAL - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240222506 titled 'FIELD EFFECT TRANSISTOR COMPRISING TRANSITION METAL DICHALCOGENIDE (TMD) AND FERROELECTRIC MATERIAL

The patent application describes an apparatus that includes a field-effect transistor with a ferroelectric material, a channel material made of a transition metal and a chalcogen, and a source and drain connected to the channel material, both made of a conductive material.

• The apparatus features a field-effect transistor with a unique combination of materials for improved performance.
• The use of a ferroelectric material in the transistor allows for non-volatile memory storage capabilities.
• The channel material comprising a transition metal and a chalcogen enhances the conductivity and efficiency of the transistor.
• The source and drain, made of a conductive material, ensure proper electrical connections within the transistor.
• This innovative design aims to enhance the functionality and reliability of field-effect transistors in various applications.

Potential Applications: - Non-volatile memory storage devices - High-performance computing systems - Advanced electronic devices requiring efficient transistors

Problems Solved: - Improved performance and reliability of field-effect transistors - Enhanced conductivity and efficiency in electronic devices

Benefits: - Non-volatile memory capabilities - Increased efficiency and reliability in electronic systems - Potential for advanced computing applications

Commercial Applications: Title: Advanced Field-Effect Transistor Technology for High-Performance Computing This technology could be utilized in the development of non-volatile memory storage devices, high-performance computing systems, and other advanced electronic devices, catering to a wide range of industries such as technology, telecommunications, and aerospace.

Questions about Field-Effect Transistor Technology: 1. How does the use of a ferroelectric material impact the performance of the transistor? 2. What are the potential applications of this innovative transistor design?

Frequently Updated Research: Stay updated on the latest advancements in field-effect transistor technology, including research on new materials, manufacturing processes, and applications to further enhance electronic devices.

Original Abstract Submitted

an apparatus, comprising a field effect transistor comprising a ferroelectric material, a channel material comprising a transition metal and a chalcogen, a source and a drain coupled to the channel material, the source and drain comprising a conductive material.