Intel corporation (20240222483). 2D NANORIBBONS UTILIZING SILICON SCAFFOLDING simplified abstract

2D NANORIBBONS UTILIZING SILICON SCAFFOLDING

Organization Name

intel corporation

Inventor(s)

Carl H. Naylor of Portland OR (US)

Kirby Maxey of Hillsboro OR (US)

Kevin O’brien of Portland OR (US)

Chelsey Dorow of Portland OR (US)

Sudarat Lee of Hillsboro OR (US)

Ashish Verma Penumatcha of Beaverton OR (US)

Uygar Avci of Portland OR (US)

Matthew Metz of Portland OR (US)

Scott B. Clendenning of Portland OR (US)

Chia-Ching Lin of Portland OR (US)

Ande Kitamura of Portland OR (US)

Mahmut Sami Kavrik of Eugene OR (US)

2D NANORIBBONS UTILIZING SILICON SCAFFOLDING - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240222483 titled '2D NANORIBBONS UTILIZING SILICON SCAFFOLDING

The abstract describes a transistor structure with nanoribbons containing silicon, transition metal, and chalcogen elements, a gate structure with an insulator and gate electrode material, and contact regions modified with dopants or altered crystal structures.

• Nanoribbons span between transistor terminals.
• Ends of nanoribbons contain silicon.
• Channel regions between ends have transition metal and chalcogen.
• Gate structure includes insulator and gate electrode material.
• Contact regions modified with dopants or altered crystal structures.

Potential Applications: - Advanced semiconductor devices - High-performance transistors - Integrated circuit technology

Problems Solved: - Enhancing transistor performance - Improving conductivity and efficiency - Enabling miniaturization of electronic devices

Benefits: - Increased speed and efficiency of electronic devices - Enhanced functionality of integrated circuits - Potential for smaller and more powerful devices

Commercial Applications: Title: Advanced Semiconductor Technology for Enhanced Performance This technology could revolutionize the semiconductor industry by enabling faster and more efficient electronic devices. It has the potential to be used in various commercial applications such as smartphones, computers, and other consumer electronics.

Prior Art: Further research can be conducted in the field of nanotechnology, semiconductor materials, and transistor design to explore similar innovations and advancements.

Frequently Updated Research: Researchers are continually exploring new materials and structures to improve transistor performance and efficiency. Stay updated on the latest developments in nanotechnology and semiconductor technology for potential breakthroughs in this field.

Questions about Transistor Structure with Nanoribbons: 1. How does the use of nanoribbons in transistor structures improve performance?

  Nanoribbons provide a high surface area for efficient charge transport, enhancing conductivity and speed in electronic devices.

2. What are the potential challenges in implementing this advanced transistor structure in commercial applications?

  The integration of nanoribbons and complex materials may pose manufacturing challenges and require specialized processes for mass production.

Original Abstract Submitted

a transistor structure includes a stack of nanoribbons spanning between terminals of the transistor. ends of the nanoribbons include silicon, and channel regions between the ends include a transition metal and a chalcogen. a gate structure over the channel regions includes an insulator between the channel regions and a gate electrode material. contact regions may be formed by modifying portions of the channel regions by adding a dopant to, or altering the crystal structure of, the channel regions. the transistor structure may be in an integrated circuit device.