Intel corporation (20240222440). TRANSISTOR WITH A BODY AND BACK GATE STRUCTURE IN DIFFERENT MATERIAL LAYERS simplified abstract

TRANSISTOR WITH A BODY AND BACK GATE STRUCTURE IN DIFFERENT MATERIAL LAYERS

Organization Name

intel corporation

Inventor(s)

Samuel James Bader of Hillsboro OR (US)

Han Wui Then of Portland OR (US)

Ibrahim Ban of Beaverton OR (US)

Heli Chetanbhai Vora of Hillsboro OR (US)

Marko Radosavljevic of Portland OR (US)

TRANSISTOR WITH A BODY AND BACK GATE STRUCTURE IN DIFFERENT MATERIAL LAYERS - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240222440 titled 'TRANSISTOR WITH A BODY AND BACK GATE STRUCTURE IN DIFFERENT MATERIAL LAYERS

The abstract describes techniques for bonding a silicon layer with a GaN layer, where each layer contains a portion of a device.

• Layer transfer techniques are used to bond the silicon layer with the GaN layer.
• The silicon layer includes a first portion of a device, such as a transistor.
• The GaN layer includes a second portion of the device.
• The patent application may cover other related embodiments as well.

Potential Applications:

• Semiconductor manufacturing
• Electronics industry
• Research and development in materials science

Problems Solved:

• Enhancing device performance by bonding different layers efficiently
• Improving the integration of silicon and GaN in electronic devices

Benefits:

• Increased device efficiency and performance
• Enhanced reliability and durability of electronic components
• Potential cost savings in manufacturing processes

Commercial Applications:

• Production of high-performance electronic devices
• Integration of silicon and GaN in various applications such as power electronics and telecommunications

Questions about Layer Transfer Techniques for Silicon and GaN Bonding: 1. How do layer transfer techniques improve the performance of electronic devices? 2. What are the potential challenges in implementing silicon-GaN bonding in industrial applications?

Frequently Updated Research: Ongoing research in semiconductor materials and device integration techniques may provide further insights into optimizing the bonding of silicon and GaN layers for enhanced device performance.

Original Abstract Submitted

embodiments described herein may be related to apparatuses, processes, systems, and/or techniques for using layer transfer techniques to bond a silicon layer with a gan layer, where the silicon layer includes a first portion of a device, for example a transistor, and the gan layer includes a second portion of the device. other embodiments may be described and/or claimed.